Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.最新文献_第6页

The enabling solution of Cu/low-k planarization technology 铜/低钾平化技术的使能方案

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499951

Y. Wada, I. Noji, I. Kobata, T. Kohama, A. Fukunaga, M. Tsujimura

引用次数: 3

BEOL process integration technology for 45 nm node porous low-k/copper interconnects 45纳米节点多孔低k/铜互连的BEOL工艺集成技术

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499903

N. Matsunaga, N. Nakamura, K. Higashi, H. Yamaguchi, T. Watanabe, K. Akiyama, S. Nakao, K. Fujita, H. Miyajima, S. Omoto, A. Sakata, T. Katata, Y. Kagawa, H. Kawashima, Y. Enomoto, T. Hasegawa, H. Shibata

引用次数: 7

New insight into stress induced voiding mechanism in Cu interconnects Cu互连中应力诱导空化机制的新认识

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499943

Sun-jung Lee, Soo-Geun Lee, B. Suh, Hong-jae Shin, N. Lee, Ho-Kyu Kang, G. Suh

引用次数: 7

Optimization of signal propagation performances in interconnects of the 45 nm node by exhaustive analysis of the technological parameters impact 通过对工艺参数影响的详尽分析，优化45nm节点互连中的信号传播性能

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499929

A. Farcy, O. Cueto, B. Blampey, V. Arnal, L. Gosset, W. Besling, S. Chhun, T. Lacrevaz, C. Bermond, B. Fléchet, O. Rousire, F. de Crécy, G. Angénieux, J. Torres

引用次数: 2

Extendibility of PVD barrier/seed for BEOL Cu metallization 用于BEOL铜金属化的PVD屏障/种子的可扩展性

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499954

C. Yang, D. Edelstein, L. Clevenger, A. Cowley, J. Gill, K. Chanda, A. Simon, T. Dalton, B. Agarwala, E. Cooney, D. Nguyen, T. Spooner, A. Stamper

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引用次数: 3

Impact of Cu barrier dielectrics upon stress-induced voiding of dual-damascene copper interconnects 铜势垒介质对双砷铜互连应力致空化的影响

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499916

K. Ishikawa, H. Shimazu, T. Oshima, J. Noguchi, T. Tamaru, H. Aoki, T. Ando, T. Iwasaki, T. Saito

引用次数: 2

Effect of CoWP cap thickness on via yield and reliability for Cu interconnects with CoWP-only cap process cop帽厚度对纯cop帽工艺铜互连通孔率和可靠性的影响

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499944

J. Gambino, J. Wynne, S. Smith, S. Mongeon, P. Pokrinchak, D. Meatyard

引用次数: 3

Current and future challenges of DRAM metallization DRAM金属化的当前和未来挑战

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499974

D. Weber, A. Thies, U. Kahler, M. Lepper, R. Schutz

引用次数: 7

Barrier layer effects on electromigration reliability of Cu/low k interconnects 阻挡层对铜/低钾互连电迁移可靠性的影响

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499914

X. Lu, J. Pyun, B. Li, N. Henis, K. Neuman, K. Pfeifer, P. Ho

引用次数: 7

Design rules for improving predictability of on-chip antenna characteristics in the presence of other metal structures 在存在其他金属结构的情况下，提高片上天线特性可预测性的设计规则

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI: 10.1109/IITC.2005.1499949

E. Seok, K. O. Kenneth

引用次数: 40