铜势垒介质对双砷铜互连应力致空化的影响

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI:10.1109/IITC.2005.1499916

K. Ishikawa, H. Shimazu, T. Oshima, J. Noguchi, T. Tamaru, H. Aoki, T. Ando, T. Iwasaki, T. Saito

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引用次数: 2

摘要

本文讨论了双砷铜互连中的应力诱导空化(SIV)问题。为了缓和Cu应力及其梯度，我们重点研究了Cu势垒介质。用SiC薄膜作为Cu势垒介质，成功地抑制了Cu互连的SIV。有限元法和分子动力学分析揭示了应力分布及其对孔洞生长的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of Cu barrier dielectrics upon stress-induced voiding of dual-damascene copper interconnects

In this paper, we discuss the stress-induced voiding (SIV) in dual-damascene Cu interconnects. To relax the Cu stress and its gradient, we focused on the Cu barrier dielectrics. The SIV of Cu interconnects was successfully suppressed by using SiC film as a Cu barrier dielectric. The finite element method (FEM) and the molecular dynamics (MD) analysis revealed the stress distribution and its effects on the void growth.

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Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.

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