cop帽厚度对纯cop帽工艺铜互连通孔率和可靠性的影响

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI:10.1109/IITC.2005.1499944

J. Gambino, J. Wynne, S. Smith, S. Mongeon, P. Pokrinchak, D. Meatyard

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引用次数: 3

摘要

通过电阻和应力迁移寿命表征了仅cop帽工艺(即无介电帽)和cop +SiN帽工艺。对于纯cop工艺，通孔阻力和应力迁移寿命与cop厚度有关。为了获得紧密分布的通孔电阻和较长的应力迁移寿命，数据表明，在通孔蚀刻和带化过程中，cop必须足够厚，以保护Cu。

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Effect of CoWP cap thickness on via yield and reliability for Cu interconnects with CoWP-only cap process

Via resistance and stress migration lifetime were characterized for a CoWP-only cap process (i.e. no dielectric cap) and a CoWP+SiN cap process. For the CoWP-only process, the via resistance and stress migration lifetime depended on the CoWP thickness. In order to achieve a tightly distributed via resistance and long stress migration lifetime, the data suggests that the CoWP must be sufficiently thick to protect the Cu during the via etch and strip processes.

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Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.

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