Effect of porosity on reducing cohesive strength and accelerating crack growth in ultra low-k thin-films [IC interconnect applications]

E. Guyer, R. Dauskardt
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引用次数: 2

Abstract

The reliable fabrication of interconnects containing nanoporous low dielectric constant (LKD) films has proven to be a significant technological challenge. The LKDs are brittle in nature and susceptible to stress corrosion cracking in reactive aqueous environments. Moreover, nearly all levels of processing involve subjecting these extremely fragile materials to mechanical loads in the presence of harsh aqueous solutions, such as chemical mechanical planarization (CMP). Here we demonstrate how controlled volume fractions of nanometer scale porosity reduces the cohesive strength of LKDs and significantly accelerates the rate of crack growth in both simulated and commercial CMP solutions.
孔隙率对超低k薄膜内聚强度降低和裂纹扩展的影响[IC互连应用]
纳米多孔低介电常数(LKD)薄膜互连的可靠制造已被证明是一个重大的技术挑战。lkd本质上是脆性的,在反应性水环境中容易发生应力腐蚀开裂。此外,几乎所有级别的加工都涉及使这些极其脆弱的材料在苛刻的水溶液中承受机械负荷,例如化学机械刨平(CMP)。在这里,我们展示了在模拟和商业CMP解决方案中,纳米尺度孔隙率的控制体积分数如何降低lkd的内聚强度,并显着加快裂纹扩展速度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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