新型选择性侧壁气隙工艺[单大马士革互连]

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI:10.1109/IITC.2005.1499959

J. de Mussy, C. Bruynsereade, Z. Tokeil, G. Beyer, K. Maex

{"title":"新型选择性侧壁气隙工艺[单大马士革互连]","authors":"J. de Mussy, C. Bruynsereade, Z. Tokeil, G. Beyer, K. Maex","doi":"10.1109/IITC.2005.1499959","DOIUrl":null,"url":null,"abstract":"In the present work, we demonstrate a novel selective process for airgap formation at the interconnect sidewalls for single damascene interconnects. The proposed single step scheme is simpler than the currently existing airgap approaches. This process has been shown to be scalable down to spacings of 60 nm and allows capacitance drops in the range of 6%-39% with only a marginal increase in leakage current.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"177 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Novel selective sidewall airgap process [single damascene interconnects]\",\"authors\":\"J. de Mussy, C. Bruynsereade, Z. Tokeil, G. Beyer, K. Maex\",\"doi\":\"10.1109/IITC.2005.1499959\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the present work, we demonstrate a novel selective process for airgap formation at the interconnect sidewalls for single damascene interconnects. The proposed single step scheme is simpler than the currently existing airgap approaches. This process has been shown to be scalable down to spacings of 60 nm and allows capacitance drops in the range of 6%-39% with only a marginal increase in leakage current.\",\"PeriodicalId\":156268,\"journal\":{\"name\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"volume\":\"177 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2005.1499959\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499959","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在目前的工作中，我们展示了一种新的选择过程，可以在单大马士革互连的互连侧壁处形成气隙。所提出的单步方案比现有的气隙方法更简单。该工艺已被证明可扩展至60 nm的间距，并允许电容下降6%-39%，而泄漏电流仅略有增加。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Novel selective sidewall airgap process [single damascene interconnects]

In the present work, we demonstrate a novel selective process for airgap formation at the interconnect sidewalls for single damascene interconnects. The proposed single step scheme is simpler than the currently existing airgap approaches. This process has been shown to be scalable down to spacings of 60 nm and allows capacitance drops in the range of 6%-39% with only a marginal increase in leakage current.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.

自引率

0.00%

发文量