Using a low-k material with k=2.5 formed by a novel quasi-porogen approach for 65 nm Cu/LK interconnects

C. C. Ko, C.H. Lin, L.P. Li, K.C. Lin, Y.C. Lu, S. Jeng, C. Yu, M. Liang
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Abstract

A porous k=2.5 low-k material (LK2.5) with its pore size distribution and mechanical properties comparable to the ones of k=3.0 low-k materials (LK3.0) was developed by a novel quasi-porogen approach for 65 nm BEOL Cu dual damascene (DD) interconnects. As compared to the Cu/LK3.0 DD, the Cu/LK2.5 DD, processed using similar etching and ashing processes and chemistries, showed a 14% line-to-line (L-L) capacitance reduction at S=0.1 /spl mu/m. Other physical, electrical and reliability results show that the Cu/LK2.5 DD is comparable to the Cu/LK3.0 DD with no degradations commonly associated with conventional porous LK2.5s formed using porogens, such as peeling or LK recess in CMP, k increase or trench bottom roughening in patterning, high L-L leakage, low L-L Vbd or low SM resistance. Further process extendibility studies revealed that k<2.0 is also achievable using this quasi-porogen approach which strongly enables its applicability to current and future Cu/LK BEOL technologies.
采用一种新型准多孔材料制备的k=2.5的低k材料制备65nm Cu/LK互连
采用准成孔方法制备了一种孔径分布和力学性能与k=3.0低k材料相当的k=2.5低k材料(LK2.5),用于65 nm BEOL Cu双damascene (DD)互连。与Cu/LK3.0 DD相比,采用类似蚀刻和灰化工艺和化学处理的Cu/LK2.5 DD在S=0.1 /spl mu/m时显示出14%的线对线(L-L)电容降低。其他物理、电学和可靠性结果表明,Cu/LK2.5 DD与Cu/LK3.0 DD相当,没有使用气孔形成的传统多孔LK2.5s常见的降解现象,例如CMP中的剥落或LK凹槽,图案中的k增加或沟底粗化,高L-L泄漏,低L-L Vbd或低SM电阻。进一步的工艺可扩展性研究表明,使用这种准多孔方法也可以实现k<2.0,这使其能够适用于当前和未来的Cu/LK BEOL技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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