S. Kondo, S. Tominaga, A. Namiki, K. Yamada, D. Abe, K. Fukaya, M. Shimada, N. Kobayashi
{"title":"Novel electro-chemical mechanical planarization using carbon polishing pad to achieve robust ultra low-k/Cu integration","authors":"S. Kondo, S. Tominaga, A. Namiki, K. Yamada, D. Abe, K. Fukaya, M. Shimada, N. Kobayashi","doi":"10.1109/IITC.2005.1499982","DOIUrl":null,"url":null,"abstract":"We developed a novel electro-chemical mechanical planarization (e-CMP) method that uses a conductive carbon pad for polishing 300-mm wafers. More than one hundred electro-cells were fabricated into the carbon pad, and the method resolved issues with conventional e-CMP, such as scratching caused by metal electrodes, copper residues, and process complexity of cathode regeneration. By using an e-CMP process followed by TaN-CMP, porous low-k/Cu interconnects were successfully fabricated.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499982","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
We developed a novel electro-chemical mechanical planarization (e-CMP) method that uses a conductive carbon pad for polishing 300-mm wafers. More than one hundred electro-cells were fabricated into the carbon pad, and the method resolved issues with conventional e-CMP, such as scratching caused by metal electrodes, copper residues, and process complexity of cathode regeneration. By using an e-CMP process followed by TaN-CMP, porous low-k/Cu interconnects were successfully fabricated.