新型电化学机械刨平技术，采用碳抛光垫实现超低k/Cu集成

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI:10.1109/IITC.2005.1499982

S. Kondo, S. Tominaga, A. Namiki, K. Yamada, D. Abe, K. Fukaya, M. Shimada, N. Kobayashi

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引用次数: 6

摘要

我们开发了一种新的电化学机械刨平(e-CMP)方法，该方法使用导电碳垫抛光300毫米晶圆。该方法解决了传统e-CMP存在的金属电极划伤、铜残留、阴极再生过程复杂等问题。采用e-CMP工艺和TaN-CMP工艺，成功制备了多孔低k/Cu互连。

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Novel electro-chemical mechanical planarization using carbon polishing pad to achieve robust ultra low-k/Cu integration

We developed a novel electro-chemical mechanical planarization (e-CMP) method that uses a conductive carbon pad for polishing 300-mm wafers. More than one hundred electro-cells were fabricated into the carbon pad, and the method resolved issues with conventional e-CMP, such as scratching caused by metal electrodes, copper residues, and process complexity of cathode regeneration. By using an e-CMP process followed by TaN-CMP, porous low-k/Cu interconnects were successfully fabricated.

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Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.

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