45纳米及以上节点的气隙集成

Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005. Pub Date : 2005-06-06 DOI:10.1109/IITC.2005.1499997

R. Daamen, G. Verheijden, P. Bancken, T. Vandeweyer, J. Michelon, V. Nguyễn Hoàng, R. Hoofman, M. Gallagher

{"title":"45纳米及以上节点的气隙集成","authors":"R. Daamen, G. Verheijden, P. Bancken, T. Vandeweyer, J. Michelon, V. Nguyễn Hoàng, R. Hoofman, M. Gallagher","doi":"10.1109/IITC.2005.1499997","DOIUrl":null,"url":null,"abstract":"First promising results including reliability and electromigration of an extendable air gap integration approach obtaining mechanically stable air cavities at the inter-metal dielectric (IMD) level are presented. Extraction of the effective dielectric constant (k/sub eff/) is demonstrated to be 1.45 for non-passivated single damascene structures. Using 45 nm node specifications and the proposed integration scheme, two metal levels are simulated showing a k/sub eff/ of less than 2.0 after full integration, fulfilling multiple future interconnect node requirements.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Air gap integration for the 45nm node and beyond\",\"authors\":\"R. Daamen, G. Verheijden, P. Bancken, T. Vandeweyer, J. Michelon, V. Nguyễn Hoàng, R. Hoofman, M. Gallagher\",\"doi\":\"10.1109/IITC.2005.1499997\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"First promising results including reliability and electromigration of an extendable air gap integration approach obtaining mechanically stable air cavities at the inter-metal dielectric (IMD) level are presented. Extraction of the effective dielectric constant (k/sub eff/) is demonstrated to be 1.45 for non-passivated single damascene structures. Using 45 nm node specifications and the proposed integration scheme, two metal levels are simulated showing a k/sub eff/ of less than 2.0 after full integration, fulfilling multiple future interconnect node requirements.\",\"PeriodicalId\":156268,\"journal\":{\"name\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2005.1499997\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499997","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

首先介绍了一种可扩展气隙集成方法在金属间介电(IMD)水平上获得机械稳定气腔的可靠性和电迁移等有希望的结果。对于未钝化的单大马士革结构，提取的有效介电常数(k/sub - eff/)为1.45。采用45纳米节点规格和提出的集成方案，模拟了两个金属电平，显示完全集成后的k/sub /小于2.0，满足未来多个互连节点的要求。

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Air gap integration for the 45nm node and beyond

First promising results including reliability and electromigration of an extendable air gap integration approach obtaining mechanically stable air cavities at the inter-metal dielectric (IMD) level are presented. Extraction of the effective dielectric constant (k/sub eff/) is demonstrated to be 1.45 for non-passivated single damascene structures. Using 45 nm node specifications and the proposed integration scheme, two metal levels are simulated showing a k/sub eff/ of less than 2.0 after full integration, fulfilling multiple future interconnect node requirements.

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Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.

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