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8th IEEE International Conference on Group IV Photonics最新文献

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Design of Ge/SiGe quantum cascade lasers using the density matrix model 利用密度矩阵模型设计Ge/SiGe量子级联激光器
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053794
T. Dinh, A. Valavanis, Z. Ikonić, R. Kelsall
{"title":"Design of Ge/SiGe quantum cascade lasers using the density matrix model","authors":"T. Dinh, A. Valavanis, Z. Ikonić, R. Kelsall","doi":"10.1109/GROUP4.2011.6053794","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053794","url":null,"abstract":"An automated design tool based on a density matrix model has been developed to model and optimize terahertz Ge/SiGe quantum cascade lasers. An optimum bound-to-continuum 7-well structure has been obtained.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"324 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132528897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strain engineering of the electroabsorption response in Ge/SiGe multiple quantum well heterostructures Ge/SiGe多量子阱异质结构中电吸收响应的应变工程
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053731
L. Lever, Youfang Hu, M. Myronov, Xue-Chao Liu, N. Owens, F. Gardes, I. Marko, Stephen J. Sweeney, Z. Ikonić, D. Leadley, Gra Reed, R. Kelsall
{"title":"Strain engineering of the electroabsorption response in Ge/SiGe multiple quantum well heterostructures","authors":"L. Lever, Youfang Hu, M. Myronov, Xue-Chao Liu, N. Owens, F. Gardes, I. Marko, Stephen J. Sweeney, Z. Ikonić, D. Leadley, Gra Reed, R. Kelsall","doi":"10.1109/GROUP4.2011.6053731","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053731","url":null,"abstract":"Many fibre-optic telecommunications systems exploit the spectral ‘window’ at 1310 nm, which corresponds to zero dispersion in standard single-mode fibres (SMFs). In particular, several passive optical network (PON) architectures use 1310nm for upstream signals,1 and so compact, low-cost and low-power modulators operating at 1310 nm that can be integrated into Si electronic-photonic integrated circuits would be extremely desireable for futre fibre-to-the-home (FTTH) applications.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133253136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SOI thickness uniformity improvement using corrective etching for silicon nano-photonic device 用校正蚀刻改善硅纳米光子器件的SOI厚度均匀性
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053719
S. Selvaraja, E. Rosseel, L. Fernández, M. Tabat, W. Bogaerts, J. Hautala, P. Absil
{"title":"SOI thickness uniformity improvement using corrective etching for silicon nano-photonic device","authors":"S. Selvaraja, E. Rosseel, L. Fernández, M. Tabat, W. Bogaerts, J. Hautala, P. Absil","doi":"10.1109/GROUP4.2011.6053719","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053719","url":null,"abstract":"We present our recent results on Si thickness uniformity improvement in a SOI wafer. We improved the thickness uniformity by 50%. The effect of the correction process on the propagation loss and device uniformity is also presented.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"244 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115594305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Grating couplers as optical probe pads in a standard CMOS process 光栅耦合器在标准CMOS工艺中的光学探头垫
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053738
J. Hofrichter, W. Green, F. Horst, S. Assefa, Min Yang, B. Offrein, Y. Vlasov
{"title":"Grating couplers as optical probe pads in a standard CMOS process","authors":"J. Hofrichter, W. Green, F. Horst, S. Assefa, Min Yang, B. Offrein, Y. Vlasov","doi":"10.1109/GROUP4.2011.6053738","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053738","url":null,"abstract":"To enable in-line nanophotonic device monitoring, grating couplers for near-vertical wafer-scale optical probing are fabricated in a standard CMOS process. These partially etched “optical probes” demonstrate a robust 3-dB-bandwidth larger than 80 nm allowing for photonic device characterization over the entire C-band throughout the fabrication process.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123937697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Silicon-on-insulator grating coupler with low back-reflection 低背反射绝缘体上硅光栅耦合器
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053713
N. Na, H. Frish, I. Hsieh, Oshrit Harel, Roshan J. George, A. Barkai, H. Rong
{"title":"Silicon-on-insulator grating coupler with low back-reflection","authors":"N. Na, H. Frish, I. Hsieh, Oshrit Harel, Roshan J. George, A. Barkai, H. Rong","doi":"10.1109/GROUP4.2011.6053713","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053713","url":null,"abstract":"We design and fabricate an efficient broadband grating coupler (GC) on a 400nm-thick silicon-on-insulator (SOI) wafer. The measured coupling loss is 2.7dB when coupling to a single-mode fiber (SMF) at 1310nm wavelength with TE polarization. 1dB-full-width and back-reflection are determined to be 30nm and −30dB, respectively.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124199380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The effects of tensile-strain conditions on doping density requirements for Ge-based injection lasers 拉伸应变条件对锗基注入激光器掺杂密度要求的影响
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053746
O. Aldaghri, Z. Ikonić, R. Kelsall
{"title":"The effects of tensile-strain conditions on doping density requirements for Ge-based injection lasers","authors":"O. Aldaghri, Z. Ikonić, R. Kelsall","doi":"10.1109/GROUP4.2011.6053746","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053746","url":null,"abstract":"The doping density required for filling the indirect valleys up to the direct valley in Ge bulk and quantum wells under various tensile-strain conditions is investigated, and the optimum cases for Ge lasers identified.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"317 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124227869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Azimuthal position dependent optical drop filters based on periodically patterned silicon microring resonators 基于周期性图案硅微环谐振器的方位位置依赖光学滴滤光片
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053743
Jonathan Y. Lee, P. Fauchet
{"title":"Azimuthal position dependent optical drop filters based on periodically patterned silicon microring resonators","authors":"Jonathan Y. Lee, P. Fauchet","doi":"10.1109/GROUP4.2011.6053743","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053743","url":null,"abstract":"Using the unique beating patterns in periodically-patterned ring resonators operating in the slow light regime, we demonstrate a novel drop filter with channels outputs depending on the relative azimuthal position between the input and drop port waveguides.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125204244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CMOS CW tunable III–V microdisk LASERs for optical interconnects in integrated circuits 用于集成电路中光互连的CMOS连续波可调谐III-V微盘激光器
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053755
F. Mandorlo, P. Rojo Romeo, L. Ferrier, N. Olivier, R. Orobtchouk, J. Fédéli, X. Letartre
{"title":"CMOS CW tunable III–V microdisk LASERs for optical interconnects in integrated circuits","authors":"F. Mandorlo, P. Rojo Romeo, L. Ferrier, N. Olivier, R. Orobtchouk, J. Fédéli, X. Letartre","doi":"10.1109/GROUP4.2011.6053755","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053755","url":null,"abstract":"Full CMOS compatible microdisk LASERs have been fabricated on 200 mm SOI wafers. CW operation with a sub-mW threshold is obtained with low voltage operation. Coupling the microdisk to a pseudo cavity, formed by a photonic crystal and the coupled waveguide itself, we also demonstrate mode hopping and multimode emission thanks to an active control of its optical paths.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125565434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fine thickness control of amorphous silicon by wet-etching for low loss wire waveguide 湿法蚀刻低损耗线波导非晶硅精细厚度控制
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053732
K. Furuya, Y. Sakakibara, Koichi Nakanishi, R. Takei, E. Itoga, Masao Suzuki, M. Okano, T. Kamei, M. Mori
{"title":"Fine thickness control of amorphous silicon by wet-etching for low loss wire waveguide","authors":"K. Furuya, Y. Sakakibara, Koichi Nakanishi, R. Takei, E. Itoga, Masao Suzuki, M. Okano, T. Kamei, M. Mori","doi":"10.1109/GROUP4.2011.6053732","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053732","url":null,"abstract":"Isotropic wet-etching without surface roughening was applied to an a-Si:H film with nanometer-scale thickness controllability. Record ∼1.2 dB/cm low propagation loss was obtained in an etched wire waveguide, being comparable to those of SOI waveguides.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125903931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nonreciprocal light propagation on an integrated silicon photonic chip 集成硅光子芯片上的非互易光传输
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053826
Jingqing Huang, Liang Feng, M. Ayache, Yelong Xu, Ming-Hui Lu, Yan-Feng Chen, Y. Fainman, A. Scherer
{"title":"Nonreciprocal light propagation on an integrated silicon photonic chip","authors":"Jingqing Huang, Liang Feng, M. Ayache, Yelong Xu, Ming-Hui Lu, Yan-Feng Chen, Y. Fainman, A. Scherer","doi":"10.1109/GROUP4.2011.6053826","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053826","url":null,"abstract":"We have designed, fabricated, and tested a CMOS compatible silicon waveguide system that demonstrates nonreciprocal light propagation on-chip, by mimicking microscopic non-Hermitian optical potentials for guided light and thus spontaneously breaking parity-time symmetry. Experiments were performed at 1.55 µm wavelength for potential telecommunication applications.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129341363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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