用校正蚀刻改善硅纳米光子器件的SOI厚度均匀性

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053719

S. Selvaraja, E. Rosseel, L. Fernández, M. Tabat, W. Bogaerts, J. Hautala, P. Absil

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引用次数: 19

摘要

我们介绍了我们在SOI晶圆中改善硅厚度均匀性的最新结果。我们将厚度均匀性提高了50%。分析了校正过程对传输损耗和器件均匀性的影响。

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SOI thickness uniformity improvement using corrective etching for silicon nano-photonic device

We present our recent results on Si thickness uniformity improvement in a SOI wafer. We improved the thickness uniformity by 50%. The effect of the correction process on the propagation loss and device uniformity is also presented.

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8th IEEE International Conference on Group IV Photonics

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