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8th IEEE International Conference on Group IV Photonics最新文献

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A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides 与SOI波导单片集成的Ge/SiGe量子阱波导调制器
8th IEEE International Conference on Group IV Photonics Pub Date : 2012-03-15 DOI: 10.1109/LPT.2011.2181496
S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, D. Miller
{"title":"A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides","authors":"S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, D. Miller","doi":"10.1109/LPT.2011.2181496","DOIUrl":"https://doi.org/10.1109/LPT.2011.2181496","url":null,"abstract":"We present a Ge/SiGe quantum well QCSE waveguide modulator that is monolithically integrated with SOI waveguides. The integrated device shows 3.2 dB contrast ratio with 1 V swing at 7.0 Gbps.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124798838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 75
Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure 基于n-ZnO/p-Si异质结结构的硅电光开关
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053741
T. Masaud, E. Jaberansary, D. Bagnall, H. M. H. Chong
{"title":"Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure","authors":"T. Masaud, E. Jaberansary, D. Bagnall, H. M. H. Chong","doi":"10.1109/GROUP4.2011.6053741","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053741","url":null,"abstract":"We propose a hybrid waveguide-based optical switch using n-ZnO on p-Si heterojunction structure. Under depletion-mode, the modulation depth of 6.37dB and tunable red-shift of 4 nm over cavity length of 20µm have been achieved.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114978604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Slowlight enhanced photonic crystal modulators 慢光增强光子晶体调制器
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053728
K. Debnath, L. O’Faolain, T. Krauss
{"title":"Slowlight enhanced photonic crystal modulators","authors":"K. Debnath, L. O’Faolain, T. Krauss","doi":"10.1109/GROUP4.2011.6053728","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053728","url":null,"abstract":"We use the slow light effect to enhance modulation in a carrier injection Mach Zehnder interferometer and enhance the modulation efficiency by a factor of 8 relative to a rib waveguide device.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128967039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Reconfigurable electro-optical logic in silicon photonic integrated circuits 硅光子集成电路中的可重构电光逻辑
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053708
Qianfan Xu, R. Soref
{"title":"Reconfigurable electro-optical logic in silicon photonic integrated circuits","authors":"Qianfan Xu, R. Soref","doi":"10.1109/GROUP4.2011.6053708","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053708","url":null,"abstract":"The paper presents a new optical directed logic architecture that is based on a regular array of integrated optical switches. The same circuit can be reconfigured to perform different combinational logic functions. Its application in network routing is discussed.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129073208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers 硅集成激光器用高掺锗pnn二极管的电致发光
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053759
R. Camacho-Aguilera, J. Bessette, Yan Cai, L. Kimerling, J. Michel
{"title":"Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers","authors":"R. Camacho-Aguilera, J. Bessette, Yan Cai, L. Kimerling, J. Michel","doi":"10.1109/GROUP4.2011.6053759","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053759","url":null,"abstract":"Edge-emission electroluminescence from waveguide Ge-on-Si pnn heterojunction diode structures is demonstrated. Selective growth of highly phosphorus doped Ge in oxide trenches shows promise as a design for electrically pumped laser on Si.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121381113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Ge(111)-fin light-emitting diodes Ge(111)翅片发光二极管
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053768
K. Tani, S. Saito, K. Oda, M. Miura, T. Mine, T. Sugawara, T. Ido
{"title":"Ge(111)-fin light-emitting diodes","authors":"K. Tani, S. Saito, K. Oda, M. Miura, T. Mine, T. Sugawara, T. Ido","doi":"10.1109/GROUP4.2011.6053768","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053768","url":null,"abstract":"Ge quantum wells perpendicular to a substrate, called Ge fins, have been fabricated by selectively oxidizing Si in SiGe grown epitaxially on an atomically flat Si(111) surface. The three-dimensional structure of the fins is suitable for relaxing the compressive strain induced by the lattice constant mismatch between the Si and Ge. The current voltage characteristics of Ge diodes show low dark currents, confirming the high crystalline quality of the Ge fins. By injecting forward currents into the Ge fins, we found direct recombinations at the Γ valley.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126444934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
DPSK demodulation with a single silicon photonic nanowire waveguide 单硅光子纳米线波导的DPSK解调
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053804
R. Kou, K. Yamada, H. Nishi, T. Tsuchizawa, Toshifumi Watanabe, H. Shinojima, S. Itabashi
{"title":"DPSK demodulation with a single silicon photonic nanowire waveguide","authors":"R. Kou, K. Yamada, H. Nishi, T. Tsuchizawa, Toshifumi Watanabe, H. Shinojima, S. Itabashi","doi":"10.1109/GROUP4.2011.6053804","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053804","url":null,"abstract":"We describe a 10-Gbps differential phase-shift keying demodulation with huge birefringence in a silicon channel waveguide. Compared with conventional free-space optics, a planar lightwave circuit and other structures based delay interferometers, the size of device can be significantly reduced.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130691870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low profile silicon photonics packaging approach featuring configurable multiple electrical and optical connectivity 低姿态的硅光子封装方法，具有可配置的多个电和光连接
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053822
J. V. Galán, T. Tekin, G. B. Preve, A. Brimont, M. Llopis, P. Sanchis
{"title":"Low profile silicon photonics packaging approach featuring configurable multiple electrical and optical connectivity","authors":"J. V. Galán, T. Tekin, G. B. Preve, A. Brimont, M. Llopis, P. Sanchis","doi":"10.1109/GROUP4.2011.6053822","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053822","url":null,"abstract":"A package solution for silicon photonic integrated circuits with multiple input/output grating-based optical interfaces is proposed and experimentally demonstrated. The approach is based on using a subassembly sub-mount carrier to maintain standard-compatible lateral orientation for the fibers in the package.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124539660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasmonic nanotips for on-chip focusing of light 用于片上聚焦光的等离子体纳米尖
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053716
B. Desiatov, I. Goykhman, U. Levy
{"title":"Plasmonic nanotips for on-chip focusing of light","authors":"B. Desiatov, I. Goykhman, U. Levy","doi":"10.1109/GROUP4.2011.6053716","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053716","url":null,"abstract":"We investigate numerically and experimentally the on-chip nanoscale focusing of surface plasmon polaritons (SPPs) in metallic nanotip coupled to the silicon waveguide. Strong field enhancement is observed at the apex of the tip.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123971250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hybrid polymer-nanocrystal heterostructures for high-performance chip-integrated near-infrared LEDs 高性能芯片集成近红外led的聚合物-纳米晶杂化异质结构
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053787
X. Ma, F. Xu, J. Benavides, S. Cloutier
{"title":"Hybrid polymer-nanocrystal heterostructures for high-performance chip-integrated near-infrared LEDs","authors":"X. Ma, F. Xu, J. Benavides, S. Cloutier","doi":"10.1109/GROUP4.2011.6053787","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053787","url":null,"abstract":"We report an all solution-based method producing hybrid heterostructures with efficient light-emission in the near-infrared. This robust, low-cost and versatile architecture is especially useful for flexible or reconfigurable optoelectronics, energy harvesting and biosensing chip-integrated platforms.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124497266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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