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8th IEEE International Conference on Group IV Photonics最新文献

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Light generation in silicon photonic crystal cavities 硅光子晶体腔中的光产生
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053747
M. Galli, L. O’Faolain, D. Gerace, R. Lo Savio, S. Portalupi, A. Shakoor, K. Welna, L. Andreani, T. Krauss, A. Irrera, G. Franzò, F. Priolo
{"title":"Light generation in silicon photonic crystal cavities","authors":"M. Galli, L. O’Faolain, D. Gerace, R. Lo Savio, S. Portalupi, A. Shakoor, K. Welna, L. Andreani, T. Krauss, A. Irrera, G. Franzò, F. Priolo","doi":"10.1109/GROUP4.2011.6053747","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053747","url":null,"abstract":"Far-field optimized photonic crystal nanocavities are used to strongly increase light generation from crystalline silicon. Low-power continuous-wave harmonic generation as well as efficient room temperature light-emission from optically-active defects are demonstrated in these devices.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128569781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Si nanowire light emitting devices 硅纳米线发光器件
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053735
A. Irrera, P. Artoni, F. Iacona, G. Franzò, M. Galli, B. Fazio, F. Priolo
{"title":"Si nanowire light emitting devices","authors":"A. Irrera, P. Artoni, F. Iacona, G. Franzò, M. Galli, B. Fazio, F. Priolo","doi":"10.1109/GROUP4.2011.6053735","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053735","url":null,"abstract":"We present a new approach for the direct synthesis of Si nanowires exhibiting room temperature light emission due to quantum confinement effects. We also demonstrate an efficient electroluminescence emission at low voltage from Si NWs.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123080051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As 锗在Si衬底上外延生长In0.01Ga0.99As
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053801
Weixuan Hu, B. Cheng, C. Xue, S. Su, Zhi Liu, Yaming Li, Qiming Wang
{"title":"Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As","authors":"Weixuan Hu, B. Cheng, C. Xue, S. Su, Zhi Liu, Yaming Li, Qiming Wang","doi":"10.1109/GROUP4.2011.6053801","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053801","url":null,"abstract":"Epitaxy of Ge on offcut Si (001) for growth of In<inf>0.01</inf>Ga<inf>0.99</inf>As was studied. Anti-phase domains were prevented in In<inf>0.01</inf>Ga<inf>0.99</inf>As layer except on the In<inf>0.01</inf>Ga<inf>0.99</inf>As/Ge interface. Threading dislocations of Ge deteriorate the quality of In<inf>0.01</inf>Ga<inf>0.99</inf>As remarkably.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114149560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation 电吸收调制用Ge/SiGe多量子阱的UHVCVD生长
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053800
Hongwei Zhao, Weixuan Hu, C. Xue, B. Cheng, Qiming Wang
{"title":"UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation","authors":"Hongwei Zhao, Weixuan Hu, C. Xue, B. Cheng, Qiming Wang","doi":"10.1109/GROUP4.2011.6053800","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053800","url":null,"abstract":"Ge/SiGe multiple quantum wells (MQWs) are grown on silicon substrates using ultra-high vacuum chemical vapor deposition (UHVCVD) technique. The quantum-confined Stark effect (QCSE) is clearly observed in our MQWs structure.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116271973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Time-domain measurement of feedback-controlled electro-optically tunable time delay and advance in silicon microring resonators 反馈控制电光可调时延的时域测量及硅微环谐振器的进展
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053784
A. Sayarath, S. Feng, A. Poon
{"title":"Time-domain measurement of feedback-controlled electro-optically tunable time delay and advance in silicon microring resonators","authors":"A. Sayarath, S. Feng, A. Poon","doi":"10.1109/GROUP4.2011.6053784","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053784","url":null,"abstract":"Time-domain measurement of feedback-controlled electro-optically tunable time delay and advance in silicon microring resonators is presented. We demonstrate time delay and advance of 47ps to 42ps with delay and advance bandwidths of ∼5.8GHz and ∼5.3GHz.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116560546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All-silicon integrated photodetector for near infrared wavelengths based on the internal photoemission effect 基于内发光效应的近红外全硅集成光电探测器
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053789
M. Casalino, L. Sirleto, M. Iodice, M. Gioffré, I. Rendina, G. Coppola
{"title":"All-silicon integrated photodetector for near infrared wavelengths based on the internal photoemission effect","authors":"M. Casalino, L. Sirleto, M. Iodice, M. Gioffré, I. Rendina, G. Coppola","doi":"10.1109/GROUP4.2011.6053789","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053789","url":null,"abstract":"We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128042836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photonic wire bonding for single-mode chip-to-chip interconnects 单模芯片对芯片互连的光子线键合
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053823
N. Lindenmann, G. Balthasar, R. Palmer, Sven Schuele, J. Leuthold, W. Freude, C. Koos
{"title":"Photonic wire bonding for single-mode chip-to-chip interconnects","authors":"N. Lindenmann, G. Balthasar, R. Palmer, Sven Schuele, J. Leuthold, W. Freude, C. Koos","doi":"10.1109/GROUP4.2011.6053823","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053823","url":null,"abstract":"Photonic wire bonds (PWB) enable single-mode chip-to-chip interconnects that are suitable for mass production. We demonstrate for the first time a single-mode PWB link between two different nanophotonic silicon-on-insulator chips.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122441219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Low-loss hybrid silicon tapers 低损耗杂化硅锥
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053715
P. Pintus, M. Heck, G. Kurczveil, J. Bowers
{"title":"Low-loss hybrid silicon tapers","authors":"P. Pintus, M. Heck, G. Kurczveil, J. Bowers","doi":"10.1109/GROUP4.2011.6053715","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053715","url":null,"abstract":"Two types of hybrid silicon tapers are studied. Single taper loss is 0.3 – 0.5 dB, enabling integration of III/V actives on silicon-on-insulator passive circuitry with low loss. Keywords-Hybrid integration, silicon-on-insulator technology","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131581547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
CW operation of III–V microdisk lasers on SOI fabricated in a 200 mm CMOS pilot line 在200毫米CMOS导频线上制造的SOI上连续运行III-V型微磁盘激光器
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053762
T. Spuesens, D. van Thourhout, P. Rojo-Romeo, P. Regreny, J. Fédéli
{"title":"CW operation of III–V microdisk lasers on SOI fabricated in a 200 mm CMOS pilot line","authors":"T. Spuesens, D. van Thourhout, P. Rojo-Romeo, P. Regreny, J. Fédéli","doi":"10.1109/GROUP4.2011.6053762","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053762","url":null,"abstract":"Compact InP-based microdisk lasers on SOI completely fabricated in a 200 mm CMOS pilot line are presented. Continuous wave operation is demonstrated with threshold currents of 600 µA and 31 µW output power.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116497482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Towards polarisation independent silicon optical modulators for high speed data transmission 用于高速数据传输的不依赖偏振的硅光调制器
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053817
F. Gardes, D. Thomson, G. Reed
{"title":"Towards polarisation independent silicon optical modulators for high speed data transmission","authors":"F. Gardes, D. Thomson, G. Reed","doi":"10.1109/GROUP4.2011.6053817","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053817","url":null,"abstract":"We report a 40 Gb/s optical modulation with similar performance for TE and TM polarisation using a depletion diode inserted in both arms of a Mach Zhender interometer.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127775451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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