基于内发光效应的近红外全硅集成光电探测器

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053789

M. Casalino, L. Sirleto, M. Iodice, M. Gioffré, I. Rendina, G. Coppola

{"title":"基于内发光效应的近红外全硅集成光电探测器","authors":"M. Casalino, L. Sirleto, M. Iodice, M. Gioffré, I. Rendina, G. Coppola","doi":"10.1109/GROUP4.2011.6053789","DOIUrl":null,"url":null,"abstract":"We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"All-silicon integrated photodetector for near infrared wavelengths based on the internal photoemission effect\",\"authors\":\"M. Casalino, L. Sirleto, M. Iodice, M. Gioffré, I. Rendina, G. Coppola\",\"doi\":\"10.1109/GROUP4.2011.6053789\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V.\",\"PeriodicalId\":141233,\"journal\":{\"name\":\"8th IEEE International Conference on Group IV Photonics\",\"volume\":\"2015 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2011.6053789\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053789","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们提出了一种基于内部光电发射效应的近红外全硅集成光电探测器。该器件在1550 nm时的响应率为0.08 mA/W，反向偏置为1 V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

All-silicon integrated photodetector for near infrared wavelengths based on the internal photoemission effect

We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

8th IEEE International Conference on Group IV Photonics

自引率

0.00%

发文量