Weixuan Hu, B. Cheng, C. Xue, S. Su, Zhi Liu, Yaming Li, Qiming Wang
{"title":"Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As","authors":"Weixuan Hu, B. Cheng, C. Xue, S. Su, Zhi Liu, Yaming Li, Qiming Wang","doi":"10.1109/GROUP4.2011.6053801","DOIUrl":null,"url":null,"abstract":"Epitaxy of Ge on offcut Si (001) for growth of In<inf>0.01</inf>Ga<inf>0.99</inf>As was studied. Anti-phase domains were prevented in In<inf>0.01</inf>Ga<inf>0.99</inf>As layer except on the In<inf>0.01</inf>Ga<inf>0.99</inf>As/Ge interface. Threading dislocations of Ge deteriorate the quality of In<inf>0.01</inf>Ga<inf>0.99</inf>As remarkably.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"132 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053801","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Epitaxy of Ge on offcut Si (001) for growth of In0.01Ga0.99As was studied. Anti-phase domains were prevented in In0.01Ga0.99As layer except on the In0.01Ga0.99As/Ge interface. Threading dislocations of Ge deteriorate the quality of In0.01Ga0.99As remarkably.
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