Hongwei Zhao, Weixuan Hu, C. Xue, B. Cheng, Qiming Wang
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UHVCVD growth of Ge/SiGe multiple quantum wells for electro-absorption modulation
Ge/SiGe multiple quantum wells (MQWs) are grown on silicon substrates using ultra-high vacuum chemical vapor deposition (UHVCVD) technique. The quantum-confined Stark effect (QCSE) is clearly observed in our MQWs structure.
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