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Direct gap photoluminescence and electroluminescence in Ge1−ySny alloys Ge1−ySny合金的直接间隙光致发光和电致发光
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053767
R. Roucka, J. Mathews, J. Menéndez, J. Kouvetakis
{"title":"Direct gap photoluminescence and electroluminescence in Ge1−ySny alloys","authors":"R. Roucka, J. Mathews, J. Menéndez, J. Kouvetakis","doi":"10.1109/GROUP4.2011.6053767","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053767","url":null,"abstract":"Direct-gap photoluminescence and electroluminescence has been observed in Ge<inf>1−y</inf>Sn<inf>y</inf> alloys. The emission in both cases is dominated by direct transitions exhibiting the expected compositional dependence. The data are consistent with the expected reduction of the Γ-L separation.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129570414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon waveguides for the 3–4 µm wavelength range 硅波导用于3-4µm波长范围
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053765
M. Milosevic, D. Thomson, Xia Chen, D. Cox, G. Mashanovich
{"title":"Silicon waveguides for the 3–4 µm wavelength range","authors":"M. Milosevic, D. Thomson, Xia Chen, D. Cox, G. Mashanovich","doi":"10.1109/GROUP4.2011.6053765","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053765","url":null,"abstract":"In this paper we report propagation and bend loss measurements for silicon-on-insulator (SOI) and silicon-on-sapphire (SOS) waveguides at 3.39 µm wavelength. Preliminary experimental results for SOI rib waveguides at around 3.8 µm are also given.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130774654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Germanium-on-glass solar cells 玻璃上锗太阳能电池
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053781
L. Colace, V. Sorianello, C. Maragliano, G. Assanto, D. Fulgoni, L. Nash, M. Palmer
{"title":"Germanium-on-glass solar cells","authors":"L. Colace, V. Sorianello, C. Maragliano, G. Assanto, D. Fulgoni, L. Nash, M. Palmer","doi":"10.1109/GROUP4.2011.6053781","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053781","url":null,"abstract":"We report on the fabrication and characterization of Ge solar cells on glass realized by layer transfer and epitaxial regrowth. These devices exhibit typical conversion efficiency exceeding 2.4% under AM1.5 irradiation and maximum efficiency of 3.7% under concentrated excitation. This approach enables flexible and affordable multi-junction engineering for solar energy conversion.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129592934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Enhanced sensitivity in silicon photonic crystal biosensors due to optical force-assisted particle transport 光学力辅助粒子输运提高了硅光子晶体生物传感器的灵敏度
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053814
Adam T. Heiniger, B. Miller, P. Fauchet
{"title":"Enhanced sensitivity in silicon photonic crystal biosensors due to optical force-assisted particle transport","authors":"Adam T. Heiniger, B. Miller, P. Fauchet","doi":"10.1109/GROUP4.2011.6053814","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053814","url":null,"abstract":"The minimum particle concentration detectable by an on-chip optical resonator is limited when particles are transported to the sensing area only by diffusion. We investigate sensitivity enhancement when optical forces assist in particle transport.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"154 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124618784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deep submicron LOCOS-defined SOI photonic wire waveguides 深亚微米locos定义的SOI光子线波导
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053779
A. Tam, M. Ibrahim, B. Lamontagne, N. G. Tarr, W. Ye, S. Janz, Danxia Xu
{"title":"Deep submicron LOCOS-defined SOI photonic wire waveguides","authors":"A. Tam, M. Ibrahim, B. Lamontagne, N. G. Tarr, W. Ye, S. Janz, Danxia Xu","doi":"10.1109/GROUP4.2011.6053779","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053779","url":null,"abstract":"The LOCOS technique for formation of SOI optical waveguides has been extended to produce low-loss photonic wire channel waveguides with deep submicron dimensions using a very simple process.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126336837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mach-Zehnder filter using multiple Si waveguide structure sections for polarization independence and improved fabrication/temperature tolerance Mach-Zehnder滤波器采用多个Si波导结构部分，具有偏振独立性和改进的制造/温度耐受性
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053778
H. Okayama, D. Shimura, H. Takahashi, H. Yaegashi
{"title":"Mach-Zehnder filter using multiple Si waveguide structure sections for polarization independence and improved fabrication/temperature tolerance","authors":"H. Okayama, D. Shimura, H. Takahashi, H. Yaegashi","doi":"10.1109/GROUP4.2011.6053778","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053778","url":null,"abstract":"We report the design of the Mach-Zehnder interferometer wavelength filter using multiple Si waveguide structure sections. Tolerance to width error, temperature shift and polarization independence can be attained.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132513899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
30 GHz Ge/SiGe multiple quantum well photodiode 30 GHz Ge/SiGe多量子阱光电二极管
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053807
P. Chaisaku, D. Marris-Morini, G. Isella, D. Chrastina, X. Le roux, S. Edmond, E. Cassan, J. Coudevylle, L. Vivien
{"title":"30 GHz Ge/SiGe multiple quantum well photodiode","authors":"P. Chaisaku, D. Marris-Morini, G. Isella, D. Chrastina, X. Le roux, S. Edmond, E. Cassan, J. Coudevylle, L. Vivien","doi":"10.1109/GROUP4.2011.6053807","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053807","url":null,"abstract":"Surface-illuminated vertical p-i-n Ge/SiGe multiple quantum wells photodiodes are demonstrated with a low dark current density of 200 mA/cm2 and 10 GHz optical bandwidth at −1 V which reaches over 30 GHz at −7 V.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128110992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Avalanche-mode operation of a simple vertical p-i-n germanium photodiode coupled with a silicon waveguide 一个简单的垂直p-i-n锗光电二极管与硅波导耦合的雪崩模式操作
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053806
K. Yamada, T. Tsuchizawa, T. Watanabe, R. Kou, H. Nishi, H. Shinojima, Y. Ishikawa, K. Wada, S. Itabashi
{"title":"Avalanche-mode operation of a simple vertical p-i-n germanium photodiode coupled with a silicon waveguide","authors":"K. Yamada, T. Tsuchizawa, T. Watanabe, R. Kou, H. Nishi, H. Shinojima, Y. Ishikawa, K. Wada, S. Itabashi","doi":"10.1109/GROUP4.2011.6053806","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053806","url":null,"abstract":"Avalanche-mode operation has been observed in a simple p-i-n germanium photodiode coupled with a silicon waveguide. Avalanche gain of ∼ 3 was observed when a 15-V reverse bias was applied to a 1-µm-thick epitaxially-grown germanium layer. This result suggests the possibility of a simple avalanche structure without a silicon multiplication layer.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"17 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133076866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Slotted photonic crystals for sensing applications 传感应用的开槽光子晶体
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053737
M. Scullion, A. Di Falco, T. Krauss
{"title":"Slotted photonic crystals for sensing applications","authors":"M. Scullion, A. Di Falco, T. Krauss","doi":"10.1109/GROUP4.2011.6053737","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053737","url":null,"abstract":"We report the detection of dissolved avidin concentrations as low as 14.5 nM using functionalized slotted photonic crystal cavities, and highlight their potential use for dense sensor arrays given their micron scale size.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131220814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
10 Gbit/s silicon optical modulator with 8 dB extinction ratio 10gbit /s硅光调制器，消光比8db
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053786
G. Rasigade, D. Marris-Morini, M. Ziebell, J. Fédéli, F. Milési, P. Grosse, E. Cassan, L. Vivien
{"title":"10 Gbit/s silicon optical modulator with 8 dB extinction ratio","authors":"G. Rasigade, D. Marris-Morini, M. Ziebell, J. Fédéli, F. Milési, P. Grosse, E. Cassan, L. Vivien","doi":"10.1109/GROUP4.2011.6053786","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053786","url":null,"abstract":"Silicon modulator based on a PIPIN diode integrated in a Mach Zehnder interferometer is demonstrated, showing 8.1 dB Extinction Ratio at 10 Gbit/s.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123657248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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