P. Chaisaku, D. Marris-Morini, G. Isella, D. Chrastina, X. Le roux, S. Edmond, E. Cassan, J. Coudevylle, L. Vivien
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Surface-illuminated vertical p-i-n Ge/SiGe multiple quantum wells photodiodes are demonstrated with a low dark current density of 200 mA/cm2 and 10 GHz optical bandwidth at −1 V which reaches over 30 GHz at −7 V.
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