硅波导用于3-4µm波长范围

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053765

M. Milosevic, D. Thomson, Xia Chen, D. Cox, G. Mashanovich

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引用次数: 9

摘要

在本文中，我们报告了3.39 μ m波长下绝缘体上硅(SOI)和蓝宝石上硅(SOS)波导的传播和弯曲损耗测量。给出了在3.8µm左右的SOI肋波导的初步实验结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Silicon waveguides for the 3–4 µm wavelength range

In this paper we report propagation and bend loss measurements for silicon-on-insulator (SOI) and silicon-on-sapphire (SOS) waveguides at 3.39 µm wavelength. Preliminary experimental results for SOI rib waveguides at around 3.8 µm are also given.

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8th IEEE International Conference on Group IV Photonics

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