{"title":"Ge1−ySny合金的直接间隙光致发光和电致发光","authors":"R. Roucka, J. Mathews, J. Menéndez, J. Kouvetakis","doi":"10.1109/GROUP4.2011.6053767","DOIUrl":null,"url":null,"abstract":"Direct-gap photoluminescence and electroluminescence has been observed in Ge<inf>1−y</inf>Sn<inf>y</inf> alloys. The emission in both cases is dominated by direct transitions exhibiting the expected compositional dependence. The data are consistent with the expected reduction of the Γ-L separation.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Direct gap photoluminescence and electroluminescence in Ge1−ySny alloys\",\"authors\":\"R. Roucka, J. Mathews, J. Menéndez, J. Kouvetakis\",\"doi\":\"10.1109/GROUP4.2011.6053767\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Direct-gap photoluminescence and electroluminescence has been observed in Ge<inf>1−y</inf>Sn<inf>y</inf> alloys. The emission in both cases is dominated by direct transitions exhibiting the expected compositional dependence. The data are consistent with the expected reduction of the Γ-L separation.\",\"PeriodicalId\":141233,\"journal\":{\"name\":\"8th IEEE International Conference on Group IV Photonics\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2011.6053767\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053767","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Direct gap photoluminescence and electroluminescence in Ge1−ySny alloys
Direct-gap photoluminescence and electroluminescence has been observed in Ge1−ySny alloys. The emission in both cases is dominated by direct transitions exhibiting the expected compositional dependence. The data are consistent with the expected reduction of the Γ-L separation.
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