锗在Si衬底上外延生长In0.01Ga0.99As

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053801

Weixuan Hu, B. Cheng, C. Xue, S. Su, Zhi Liu, Yaming Li, Qiming Wang

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引用次数: 0

摘要

研究了Ge在Si(001)上外延生长In0.01Ga0.99As的过程。除In0.01Ga0.99As/Ge界面外，在In0.01Ga0.99As层中没有出现反相畴。Ge的螺纹位错使In0.01Ga0.99As的质量明显恶化。

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Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As

Epitaxy of Ge on offcut Si (001) for growth of In0.01Ga0.99As was studied. Anti-phase domains were prevented in In0.01Ga0.99As layer except on the In0.01Ga0.99As/Ge interface. Threading dislocations of Ge deteriorate the quality of In0.01Ga0.99As remarkably.

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8th IEEE International Conference on Group IV Photonics

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