R. Camacho-Aguilera, J. Bessette, Yan Cai, L. Kimerling, J. Michel
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Electroluminescence of highly doped Ge pnn diodes for Si integrated lasers
Edge-emission electroluminescence from waveguide Ge-on-Si pnn heterojunction diode structures is demonstrated. Selective growth of highly phosphorus doped Ge in oxide trenches shows promise as a design for electrically pumped laser on Si.
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