与SOI波导单片集成的Ge/SiGe量子阱波导调制器

8th IEEE International Conference on Group IV Photonics Pub Date : 2012-03-15 DOI:10.1109/LPT.2011.2181496

S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, D. Miller

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引用次数: 75

摘要

我们提出了一种与SOI波导单片集成的Ge/SiGe量子阱QCSE波导调制器。该集成器件在7.0 Gbps下的对比度为3.2 dB，摆幅为1v。

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A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides

We present a Ge/SiGe quantum well QCSE waveguide modulator that is monolithically integrated with SOI waveguides. The integrated device shows 3.2 dB contrast ratio with 1 V swing at 7.0 Gbps.

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8th IEEE International Conference on Group IV Photonics

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