基于n-ZnO/p-Si异质结结构的硅电光开关

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053741

T. Masaud, E. Jaberansary, D. Bagnall, H. M. H. Chong

{"title":"基于n-ZnO/p-Si异质结结构的硅电光开关","authors":"T. Masaud, E. Jaberansary, D. Bagnall, H. M. H. Chong","doi":"10.1109/GROUP4.2011.6053741","DOIUrl":null,"url":null,"abstract":"We propose a hybrid waveguide-based optical switch using n-ZnO on p-Si heterojunction structure. Under depletion-mode, the modulation depth of 6.37dB and tunable red-shift of 4 nm over cavity length of 20µm have been achieved.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"105 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure\",\"authors\":\"T. Masaud, E. Jaberansary, D. Bagnall, H. M. H. Chong\",\"doi\":\"10.1109/GROUP4.2011.6053741\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a hybrid waveguide-based optical switch using n-ZnO on p-Si heterojunction structure. Under depletion-mode, the modulation depth of 6.37dB and tunable red-shift of 4 nm over cavity length of 20µm have been achieved.\",\"PeriodicalId\":141233,\"journal\":{\"name\":\"8th IEEE International Conference on Group IV Photonics\",\"volume\":\"105 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2011.6053741\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053741","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们提出了一种基于p-Si异质结结构的n-ZnO混合波导光开关。在耗尽模式下，实现了6.37dB的调制深度和4 nm的可调红移，腔长为20µm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Silicon electro-optic switch based on n-ZnO/p-Si heterojunction structure

We propose a hybrid waveguide-based optical switch using n-ZnO on p-Si heterojunction structure. Under depletion-mode, the modulation depth of 6.37dB and tunable red-shift of 4 nm over cavity length of 20µm have been achieved.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

8th IEEE International Conference on Group IV Photonics

自引率

0.00%

发文量