L. Lever, Youfang Hu, M. Myronov, Xue-Chao Liu, N. Owens, F. Gardes, I. Marko, Stephen J. Sweeney, Z. Ikonić, D. Leadley, Gra Reed, R. Kelsall
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Strain engineering of the electroabsorption response in Ge/SiGe multiple quantum well heterostructures
Many fibre-optic telecommunications systems exploit the spectral ‘window’ at 1310 nm, which corresponds to zero dispersion in standard single-mode fibres (SMFs). In particular, several passive optical network (PON) architectures use 1310nm for upstream signals,1 and so compact, low-cost and low-power modulators operating at 1310 nm that can be integrated into Si electronic-photonic integrated circuits would be extremely desireable for futre fibre-to-the-home (FTTH) applications.
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