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8th IEEE International Conference on Group IV Photonics最新文献

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Compact SOI-based AWG with flattened spectral response using a MMI 紧凑的基于soi的AWG与平坦的光谱响应使用MMI
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053710
S. Pathak, E. Lambert, P. Dumon, D. van Thourhout, W. Bogaerts
{"title":"Compact SOI-based AWG with flattened spectral response using a MMI","authors":"S. Pathak, E. Lambert, P. Dumon, D. van Thourhout, W. Bogaerts","doi":"10.1109/GROUP4.2011.6053710","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053710","url":null,"abstract":"We demonstrated an ultra small 12 channels 400GHz AWG on SOI with flattened spectral response using a MMI mode shaper. Insertion loss and crosstalk are −3.29db and 17.0db, respectively. The device size is only 560×350µm<sup>2</sup>.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124620353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Silicon optical modulators for high data rate applications 用于高数据速率应用的硅光调制器
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053697
D. Thomson, F. Gardes, G. Reed, G. Rasigade, M. Ziebell, D. Marris-Morini, L. Vivien, A. Brimont, P. Sanchis, J. Fédéli, L. O’Faolain, T. Krauss, L. Lever, Z. Ikonić, R. Kelsall
{"title":"Silicon optical modulators for high data rate applications","authors":"D. Thomson, F. Gardes, G. Reed, G. Rasigade, M. Ziebell, D. Marris-Morini, L. Vivien, A. Brimont, P. Sanchis, J. Fédéli, L. O’Faolain, T. Krauss, L. Lever, Z. Ikonić, R. Kelsall","doi":"10.1109/GROUP4.2011.6053697","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053697","url":null,"abstract":"In this work we describe the carrier depletion MZI modulators, slow wave structures for modulation enhancement and the QCSE modulator which are under development in the European HELIOS project and the UK Silicon Photonics project.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124638688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain 高q硅基三维光子晶体纳米腔的制备及其具有InAs量子点增益的激光振荡
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053758
D. Cao, A. Tandaechanurat, S. Nakayama, N. Hauke, T. Zabel, S. Ishida, S. Iwamoto, J. Finley, G. Abstreiter, Y. Arakawa
{"title":"Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain","authors":"D. Cao, A. Tandaechanurat, S. Nakayama, N. Hauke, T. Zabel, S. Ishida, S. Iwamoto, J. Finley, G. Abstreiter, Y. Arakawa","doi":"10.1109/GROUP4.2011.6053758","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053758","url":null,"abstract":"We fabricated a silicon-based three-dimensional photonic crystal nanocavity by micromanipulation technique, exhibiting a high quality factor of ∼14,500. Lasing oscillation with an InAs/GaAs quantum-dot layer inserted in the cavity was successfully demonstrated at 11K.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"244 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120990238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Full-wafer loss measurements of silicon ridge waveguides 硅脊波导的全晶圆损耗测量
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053774
Michael N. Gould, Jing Li, T. Baehr‐Jones, M. Hochberg
{"title":"Full-wafer loss measurements of silicon ridge waveguides","authors":"Michael N. Gould, Jing Li, T. Baehr‐Jones, M. Hochberg","doi":"10.1109/GROUP4.2011.6053774","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053774","url":null,"abstract":"We present full-wafer loss data for ridge waveguides for three different geometries fabricated on 150 mm silicon-on-insulator wafers. Full-wafer testing was made possible by a vertically coupled, automated test system.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"2020 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127586442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
12.5-Gb/s operation of efficient silicon modulator using side-wall grating waveguide 采用侧壁光栅波导的高效硅调制器12.5 gb /s运行
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053700
S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, T. Usuki
{"title":"12.5-Gb/s operation of efficient silicon modulator using side-wall grating waveguide","authors":"S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, T. Usuki","doi":"10.1109/GROUP4.2011.6053700","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053700","url":null,"abstract":"A silicon Mach-Zehnder modulator, which has side-wall-grating waveguide, is investigated. Using the fabricated device, 12.5-Gb/s operation was demonstrated. A modulation efficiency (VπL) of 0.29 V·cm was determined from the measured extinction ratio.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"2015 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132679168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Visible light trimming of chalcogenide-assisted photonic integrated circuits 硫族辅助光子集成电路的可见光修剪
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053714
A. Canciamilla, S. Grillanda, C. Ferrari, F. Morichetti, A. Melloni, P. Velha, M. Sorel, J. Hu, J. D. Musgraves, K. Richardson, V. Singh, A. Agarwal, L. Kimerling
{"title":"Visible light trimming of chalcogenide-assisted photonic integrated circuits","authors":"A. Canciamilla, S. Grillanda, C. Ferrari, F. Morichetti, A. Melloni, P. Velha, M. Sorel, J. Hu, J. D. Musgraves, K. Richardson, V. Singh, A. Agarwal, L. Kimerling","doi":"10.1109/GROUP4.2011.6053714","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053714","url":null,"abstract":"Visible light trimming of As2S3-assisted optical waveguides is exploited to compensate for fabrication tolerances and to demonstrate permanent reconfiguration of photonic integrated circuits. Applications to ring-resonator filters and variable delay lines are presented.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130657810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon and germanium quantum well light-emitting diode 硅锗量子阱发光二极管
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053751
S. Saito
{"title":"Silicon and germanium quantum well light-emitting diode","authors":"S. Saito","doi":"10.1109/GROUP4.2011.6053751","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053751","url":null,"abstract":"I will review our attempts to develop monolithic light sources for silicon photonics. Modern silicon fabrication technology is matured enough to make light-emitting silicon and germanium quantum wells, called fins, by top-down processes.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132095100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High n++ doped germanium: Dopant in-diffusion and modeling 高n++掺杂锗:掺杂物扩散与建模
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053772
Yan Cai, R. Camacho-Aguilera, J. Bessette, L. Kimerling, J. Michel
{"title":"High n++ doped germanium: Dopant in-diffusion and modeling","authors":"Yan Cai, R. Camacho-Aguilera, J. Bessette, L. Kimerling, J. Michel","doi":"10.1109/GROUP4.2011.6053772","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053772","url":null,"abstract":"We present an active carrier concentration of 3 × 10<sup>19</sup> cm<sup>−3</sup> in epitaxial Ge-on-Si for light emitting devices by dopant enhanced in-diffusion of phosphorus from a high-level dopant reservoir.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133057921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Second-order susceptibility χ(2) in Si waveguides 硅波导的二阶磁化率χ(2)
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053704
F. Bianco, E. Borga, A. Yeremian, B. Dierre, K. Fedus, P. Bettotti, A. Pitanti, R. Pierobon, M. Ghulinyan, G. Pucker, M. Cazzanelli, Lorenzo Pavesi
{"title":"Second-order susceptibility χ(2) in Si waveguides","authors":"F. Bianco, E. Borga, A. Yeremian, B. Dierre, K. Fedus, P. Bettotti, A. Pitanti, R. Pierobon, M. Ghulinyan, G. Pucker, M. Cazzanelli, Lorenzo Pavesi","doi":"10.1109/GROUP4.2011.6053704","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053704","url":null,"abstract":"Tensile strained-silicon waveguides were produced by LPCVD (780 °C) by depositing a 150 nm-thick Si<inf>3</inf>N<inf>4</inf> overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ<sup>(2)</sup> in the bulk silicon.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"177 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122690797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Differential signal transmission in silicon-photonics integrated circuit for high density optical interconnects 高密度光互连用硅光子集成电路差分信号传输
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053818
J. Fujikata, Y. Urino, S. Akiyama, Takanori Shimizu, N. Hatori, M. Okano, M. Ishizaka, Tsuyoshi Yamamoto, T. Baba, T. Akagawa, Tatsuya Usuki, D. Okamoto, M. Miura, M. Noguchi, D. Shimura, H. Okayama, T. Tsuchizawa, Toshifumi Watanabe, K. Yamada, S. Itabashi, E. Saito, K. Wada, Takahiro Nakamura, Y. Arakawa
{"title":"Differential signal transmission in silicon-photonics integrated circuit for high density optical interconnects","authors":"J. Fujikata, Y. Urino, S. Akiyama, Takanori Shimizu, N. Hatori, M. Okano, M. Ishizaka, Tsuyoshi Yamamoto, T. Baba, T. Akagawa, Tatsuya Usuki, D. Okamoto, M. Miura, M. Noguchi, D. Shimura, H. Okayama, T. Tsuchizawa, Toshifumi Watanabe, K. Yamada, S. Itabashi, E. Saito, K. Wada, Takahiro Nakamura, Y. Arakawa","doi":"10.1109/GROUP4.2011.6053818","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053818","url":null,"abstract":"Differential signal transmission is demonstrated for high-density optical interconnects by a silicon-photonics integrated circuit, in which arrayed lasers, silicon optical modulators (Si-MODs) and germanium photodetectors (Ge-PDs) are integrated on a single silicon substrate. 3 dB gain of output signal-intensity was obtained and about 40 dB suppression of electrical cross-talk between a Si-MOD and a Ge-PD was obtained at GHz range. A lower bit-error-rate of data transmission and enhanced sensitivity of around 2 dB were achieved at 2 Gbps.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127690135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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