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8th IEEE International Conference on Group IV Photonics最新文献

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Ultra-fast optical signal processing in nonlinear silicon waveguides 非线性硅波导中的超快速光信号处理
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053808
L. Oxenløwe, M. Galili, M. Pu, H. Ji, H. Hu, K. Yvind, J. Hvam, H. Mulvad, E. Palushani, J. L. Areal, A. Clausen, P. Jeppesen
{"title":"Ultra-fast optical signal processing in nonlinear silicon waveguides","authors":"L. Oxenløwe, M. Galili, M. Pu, H. Ji, H. Hu, K. Yvind, J. Hvam, H. Mulvad, E. Palushani, J. L. Areal, A. Clausen, P. Jeppesen","doi":"10.1109/GROUP4.2011.6053808","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053808","url":null,"abstract":"We describe recent demonstrations of exploiting highly nonlinear silicon nanowires for processing Tbit/s optical data signals. We perform demultiplexing and optical waveform sampling of 1.28 Tbit/s and wavelength conversion of 640 Gbit/s data signals.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115951521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection 基于硅光波导平台的激光二极管阵列高密度混合集成光源，用于芯片间光互连
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053756
Takanori Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, Tsuyoshi Yamamoto, M. Mori, Takahiro Nakamura, Y. Arakawa
{"title":"High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection","authors":"Takanori Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, Tsuyoshi Yamamoto, M. Mori, Takahiro Nakamura, Y. Arakawa","doi":"10.1109/GROUP4.2011.6053756","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053756","url":null,"abstract":"A hybrid integrated light source was developed with a novel configuration in which a laser diode (LD) array was mounted on a silicon optical waveguide platform for inter-chip optical interconnection. An output power uniformity of 1.3 dB was observed at the 13-channel integrated light source with 30-µm pitch. Use of a SiON waveguide with a spot size converter resulted in an optical coupling loss of 1 dB between an LD and a SiON waveguide. The integrated light source including 52 output ports was demonstrated to reduce the footprint per channel. These integrated light sources are attractive candidates for use with photonic integrated circuits for high density optical interconnection.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116374740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 45
High-precision flip-chip technology for alloptical wavelength conversion using SOI photonic circuit 利用SOI光子电路实现同位光波长转换的高精度倒装技术
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053775
L. Zimmermann, G. Preve, K. Voigt, G. Winzer, J. Kreissl, L. Moerl, C. Stamatiadis, L. Stampoulidis, H. Avramopoulos
{"title":"High-precision flip-chip technology for alloptical wavelength conversion using SOI photonic circuit","authors":"L. Zimmermann, G. Preve, K. Voigt, G. Winzer, J. Kreissl, L. Moerl, C. Stamatiadis, L. Stampoulidis, H. Avramopoulos","doi":"10.1109/GROUP4.2011.6053775","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053775","url":null,"abstract":"High-precision hybrid integration on SOI photonic circuit was developed. The technology was applied to fabricate an integrated high-speed all-optical wavelength converter. Potential of the platform was demonstrated by 40Gb/s all-optical wavelength switching.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116939710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Route toward perfect imaging in Silicon-on-Insulator platform 在绝缘体上硅平台上实现完美成像的途径
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053771
A. Di Falco, S. C. Kehr, U. Leonhardt
{"title":"Route toward perfect imaging in Silicon-on-Insulator platform","authors":"A. Di Falco, S. C. Kehr, U. Leonhardt","doi":"10.1109/GROUP4.2011.6053771","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053771","url":null,"abstract":"We have designed and fabricated a Luneburg lens on Silicon-on-Insulator platform, via grayscale lithography, which implements spatial Fourier transform on the plane, independently on the angle of incidence. The presented technique can be used to fabricate perfect imaging devices.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126634123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficiency improvement of SOI waveguide grating for coupling to surface mounted photodetector SOI波导光栅与表面光电探测器耦合效率的提高
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053791
R. Takei, K. Uchiho, T. Mizumoto
{"title":"Efficiency improvement of SOI waveguide grating for coupling to surface mounted photodetector","authors":"R. Takei, K. Uchiho, T. Mizumoto","doi":"10.1109/GROUP4.2011.6053791","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053791","url":null,"abstract":"The coupling efficiency between a silicon waveguide and a surface mounted photodetector is improved by using a apodized grating coupler. The highest coupling efficiency of 86 % is obtainable for a randomly polarized lightwave.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126859658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical and optical properties of ion implanted SOI-based photonic crystals 离子注入soi基光子晶体的电学和光学特性
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053734
P. Cardile, G. Franzò, R. Lo Savio, M. Galli, T. Krauss, F. Priolo, L. O. Faolain
{"title":"Electrical and optical properties of ion implanted SOI-based photonic crystals","authors":"P. Cardile, G. Franzò, R. Lo Savio, M. Galli, T. Krauss, F. Priolo, L. O. Faolain","doi":"10.1109/GROUP4.2011.6053734","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053734","url":null,"abstract":"We investigate the electrical properties of Silicon-on-Insulator photonic crystals as a function of doping level and air filling factor. A very interesting trade-off between conductivity and optical losses in L3 cavities is also found.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122036002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Power efficiency of silicon nanocrystal based LED in pulsed regime 脉冲状态下硅纳米晶LED的功率效率
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053785
A. Marconi, A. Tengattini, A. Anopchenko, Lorenzo Pavesi, G. Pucker
{"title":"Power efficiency of silicon nanocrystal based LED in pulsed regime","authors":"A. Marconi, A. Tengattini, A. Anopchenko, Lorenzo Pavesi, G. Pucker","doi":"10.1109/GROUP4.2011.6053785","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053785","url":null,"abstract":"Power efficiency of silicon nanocrystal light-emitting devices is studied in pulsed regime. A phenomenological opto-electrical model is proposed to explain the frequency dependent electroluminescencewhich has been found.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126446186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrogen plasma treatment for Si waveguide smoothing 氢等离子体处理用于硅波导平滑
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053727
Jingnan Cai, Yu Wang, Y. Ishikawa, Y. Yamashita, Y. Kamiura, K. Wada
{"title":"Hydrogen plasma treatment for Si waveguide smoothing","authors":"Jingnan Cai, Yu Wang, Y. Ishikawa, Y. Yamashita, Y. Kamiura, K. Wada","doi":"10.1109/GROUP4.2011.6053727","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053727","url":null,"abstract":"We demonstrated that remote hydrogen plasma treatment on silicon ring resonators can smooth the Si waveguides at lower than 100 °C. This also provides a promising way to trim resonators for a designed add/drop wavelength.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131944633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of surface-plasmon-enhanced Ge-Si light-emitting diode 表面等离子体增强锗硅发光二极管的设计
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053788
Intae Jeong, Young June Park
{"title":"Design of surface-plasmon-enhanced Ge-Si light-emitting diode","authors":"Intae Jeong, Young June Park","doi":"10.1109/GROUP4.2011.6053788","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053788","url":null,"abstract":"We propose a FIN type Germanium-Silicon heterojunction light-emitting diode with metal gates on both sides. The metal gates provide the plasmon enhancement and the electrical modulation of the PN diode. Using the numerical analysis, we propose the optimal device structure to achieve the best light emitting efficiency.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133397073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GeSn on Si photodetectors grown by molecular beam epitaxy 分子束外延生长的硅光电探测器上的GeSn
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053706
S. Su, C. Xue, B. Cheng, W. Wang, G. Z. Zhang, Y. Zuo, Q.M. Wang
{"title":"GeSn on Si photodetectors grown by molecular beam epitaxy","authors":"S. Su, C. Xue, B. Cheng, W. Wang, G. Z. Zhang, Y. Zuo, Q.M. Wang","doi":"10.1109/GROUP4.2011.6053706","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053706","url":null,"abstract":"High-quality GeSn alloys were grown on Ge-buffered Si substrates and a Ge0.97Sn0.03 alloy was successfully used to fabricate photodetectors. The GeSn photodiodes have relatively high responsivities in all telecommunication bands.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115009965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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