发布求助
文献互助 智能选刊 最新文献

8th IEEE International Conference on Group IV Photonics最新文献

筛选
英文 中文
Silicon-on-insulator racetrack resonator tuning via ion implantation 通过离子注入对绝缘体上硅赛道谐振器进行调谐
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053744
J. Ackert, D. Logan, J. Doylend, A. Knights, L. Chrostowski, R. Vafaei, P. Jessop
{"title":"Silicon-on-insulator racetrack resonator tuning via ion implantation","authors":"J. Ackert, D. Logan, J. Doylend, A. Knights, L. Chrostowski, R. Vafaei, P. Jessop","doi":"10.1109/GROUP4.2011.6053744","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053744","url":null,"abstract":"We demonstrate wavelength tuning of silicon-on-insulator racetrack resonators, induced by the by the creation of defects via ion implantation. This presents a method to alter the resonant wavelength after fabrication, albeit with increased optical loss.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116750498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Schottky barrier light emitting diode in standard CMOS technology 肖特基势垒发光二极管在标准CMOS技术
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053795
Beiju Huang, Wei Wang, Zan Dong, Zanyun Zhang, Weilian Guo, Hongda Chen
{"title":"Schottky barrier light emitting diode in standard CMOS technology","authors":"Beiju Huang, Wei Wang, Zan Dong, Zanyun Zhang, Weilian Guo, Hongda Chen","doi":"10.1109/GROUP4.2011.6053795","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053795","url":null,"abstract":"Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from 673nm to 785nm.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"784 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134584788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High performance depletion-mode silicon modulators 高性能耗尽模式硅调制器
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053702
T. Liow, X. Tu, Q. Fang, Y. Xiong, Junfeng Song, Mingbin Yu, G. Lo, D. Kwong
{"title":"High performance depletion-mode silicon modulators","authors":"T. Liow, X. Tu, Q. Fang, Y. Xiong, Junfeng Song, Mingbin Yu, G. Lo, D. Kwong","doi":"10.1109/GROUP4.2011.6053702","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053702","url":null,"abstract":"Depletion mode silicon modulators with an extinction ratio of >10 dB at 12.5 Gbps and a phase-shifter optical loss of 4 dB is reported. A novel technique further reduces the optical loss, bridging the performance gap between silicon and LiNbO3 modulators.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"497 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125225309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design and implementation of SiGe HPTs using an 80GHz SiGe bipolar process technology 使用80GHz SiGe双极工艺技术设计和实现SiGe hpt
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053777
M. Rosales, J. Polleux, C. Algani
{"title":"Design and implementation of SiGe HPTs using an 80GHz SiGe bipolar process technology","authors":"M. Rosales, J. Polleux, C. Algani","doi":"10.1109/GROUP4.2011.6053777","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053777","url":null,"abstract":"We present the design and characterization of SiGe Heterojunction Phototransistors using an 80GHz commercial SiGe Bipolar process. It is shown that 50µm HPTs are exhibits highest gain.bandwidth product of 0.8GHz.A/W compared to the 10µm HPTs","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123944806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator 基于硅环谐振器调制器的无温控硅环谐振器和SOA混合激光器
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053753
Seok-Hwan Jeong, Shinsuke Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, Tatsuya Usuki, Tsuyoshi Yamamoto, K. Morito
{"title":"Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator","authors":"Seok-Hwan Jeong, Shinsuke Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, Tatsuya Usuki, Tsuyoshi Yamamoto, K. Morito","doi":"10.1109/GROUP4.2011.6053753","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053753","url":null,"abstract":"Si-wire-based hybrid laser consisting of a microring resonator (MRR) and a semiconductor optical amplifier is demonstrated. Novel transmitter scheme potentially makes it possible for a MRR-based modulator to modulate the signal without temperature control.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123387354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Ultralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junction 具有GeO2钝化和气相掺杂结的超低暗电流锗光电探测器
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053707
M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, S. Takagi
{"title":"Ultralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junction","authors":"M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, S. Takagi","doi":"10.1109/GROUP4.2011.6053707","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053707","url":null,"abstract":"Dark current reduction of Ge photodetectors has been investigated by GeO2 passivation and gas-phase doped junction. Ultralow junction and surface leakages indicate the dark current of < 1 nA is achievable in the waveguide geometry.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115504803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modification of second harmonic generation in silicon by strain and structuring 应变和结构对硅中二次谐波产生的影响
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053799
C. Schriever, C. Bohley, F. Naumann, J. de Boor, J. Lange, J. Schilling
{"title":"Modification of second harmonic generation in silicon by strain and structuring","authors":"C. Schriever, C. Bohley, F. Naumann, J. de Boor, J. Lange, J. Schilling","doi":"10.1109/GROUP4.2011.6053799","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053799","url":null,"abstract":"The influence of strain and lateral structuring on the reflected second harmonic signal in silicon is investigated. The obtained second-harmonic enhancement could be used in silicon waveguides to create a localized second order nonlinear susceptibility.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128595967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wide-gap athermal Si-slot Mach-Zhender Interferometer embedded with Benzocyclobutene 嵌入苯并环丁烯的宽间隙无热硅槽马赫-珍德干涉仪
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053821
Y. Atsumi, M. Oda, Joonhyun Kang, N. Nishiyama, S. Arai
{"title":"Wide-gap athermal Si-slot Mach-Zhender Interferometer embedded with Benzocyclobutene","authors":"Y. Atsumi, M. Oda, Joonhyun Kang, N. Nishiyama, S. Arai","doi":"10.1109/GROUP4.2011.6053821","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053821","url":null,"abstract":"An athermal Mach-Zhender Interferometer with wide-gap Si-slot waveguides was demonstrated. This structure is superior in terms of fabrication yield and reproducibility, and the temperature dependence of the wavelengths as small as −0.9 pm/K was achieved.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127928921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum interference in silicon waveguide circuits 硅波导电路中的量子干涉
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053827
D. Bonneau, E. Engin, K. Ohira, N. Suzuki, H. Yoshida, N. Iizuka, M. Ezaki, C. M. Natarajan, M. G. Tanner, R. Hadfield, S. Dorenbos, V. Zwiller, J. O'Brien, M. Thompson
{"title":"Quantum interference in silicon waveguide circuits","authors":"D. Bonneau, E. Engin, K. Ohira, N. Suzuki, H. Yoshida, N. Iizuka, M. Ezaki, C. M. Natarajan, M. G. Tanner, R. Hadfield, S. Dorenbos, V. Zwiller, J. O'Brien, M. Thompson","doi":"10.1109/GROUP4.2011.6053827","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053827","url":null,"abstract":"Quantum interference and manipulation of quantum states of light using silicon-on-insulator waveguide circuits is presented, demonstrating the potential for a silicon quantum photonics technology platform.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"283 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124528223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Novel optical sensor based on the silicon crossing-coupled microring resonator 基于硅交叉耦合微环谐振腔的新型光学传感器
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053796
H. Yi, Qifeng Long, Xingjun Wang, Zhiping Zhou
{"title":"Novel optical sensor based on the silicon crossing-coupled microring resonator","authors":"H. Yi, Qifeng Long, Xingjun Wang, Zhiping Zhou","doi":"10.1109/GROUP4.2011.6053796","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053796","url":null,"abstract":"A fabrication friendly crossing-coupled microring resonator was utilized to construct a compact and robust optical sensor which demonstrated a high sensitivity of 225nm/RIU experimentally.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"82 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120971608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信