Ultralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junction

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053707

M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, S. Takagi

引用次数: 1

Abstract

Dark current reduction of Ge photodetectors has been investigated by GeO2 passivation and gas-phase doped junction. Ultralow junction and surface leakages indicate the dark current of < 1 nA is achievable in the waveguide geometry.

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具有GeO2钝化和气相掺杂结的超低暗电流锗光电探测器

采用二氧化geo2钝化和气相掺杂结研究了锗光电探测器的暗电流降低。超低结漏和表面漏，暗电流为60;在波导几何结构中可以实现1na。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

8th IEEE International Conference on Group IV Photonics

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