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8th IEEE International Conference on Group IV Photonics最新文献

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Controlling strain in Ge on Si for EA modulators EA调制器中锗硅应变控制
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053766
R. Kuroyanagi, Y. Ishikawa, T. Tsuchizawa, S. Itabashi, K. Wada
{"title":"Controlling strain in Ge on Si for EA modulators","authors":"R. Kuroyanagi, Y. Ishikawa, T. Tsuchizawa, S. Itabashi, K. Wada","doi":"10.1109/GROUP4.2011.6053766","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053766","url":null,"abstract":"The concept of how to control operation wavelength of Ge electroabsorption modulators with external stress is shown. Enough stress to shift absorption edge of Ge is applied to Ge on Si in our experiments.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116676969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Misalignment-tolerant high-speed silicon microring modulator with interleaved p-n junctions 交错p-n结容错高速硅微环调制器
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053816
Xi Xiao, Zhiyong Li, Yingtao Hu, Yude Yu, Jinzhong Yu
{"title":"Misalignment-tolerant high-speed silicon microring modulator with interleaved p-n junctions","authors":"Xi Xiao, Zhiyong Li, Yingtao Hu, Yude Yu, Jinzhong Yu","doi":"10.1109/GROUP4.2011.6053816","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053816","url":null,"abstract":"We present a high-speed silicon microring resonator with misalignment-tolerant interleaved p-n junctions. Moderate doping concentration of 2×10<sup>17</sup> cm<sup>−3</sup> results in a V<inf>π</inf>L of 0.98 V·cm and a total propagation loss of &#60; 17 dB/cm. 8 GHz modulation bandwidth and ∼ 30 GHz electric RC bandwidth are experimentally demonstrated.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128050778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Stimulated emission in single tensile-strained Ge photonic wire 单张应变锗光子线的受激发射
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053769
M. El Kurdi, M. de Kersauson, S. David, X. Checoury, G. Beaudoin, R. Jakomin, I. Sagnes, S. Sauvage, G. Fishman, P. Boucaud
{"title":"Stimulated emission in single tensile-strained Ge photonic wire","authors":"M. El Kurdi, M. de Kersauson, S. David, X. Checoury, G. Beaudoin, R. Jakomin, I. Sagnes, S. Sauvage, G. Fishman, P. Boucaud","doi":"10.1109/GROUP4.2011.6053769","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053769","url":null,"abstract":"We have investigated the room temperature optical properties of 50 µm length, 11 µm large and 500 nm thick tensile-strained germanium photonic wires. Tensile strain is transferred in the germanium layer using a Si3N4 film stressor. An optical recombination of tensile-strained germanium involving light hole band is observed around 1690 nm at room temperature corresponding to a strain magnitude around 0.4%. We show that the waveguided emission associated with a single tensile-strained germanium wire increases superlinearly as a function of the illuminated length. A decrease of the spectral broadening is observed as the pump intensity is increased. A 80 cm−1 modal optical gain is derived from the variable strip length method.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131588672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
154µm Er doped light emitting devices: Role of silicon content 154µm掺铒发光器件:硅含量的作用
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053721
A. Tengattini, A. Marconi, A. Anopchenko, N. Prtljaga, Lorenzo Pavesi, J. Ramírez, O. Jambois, Y. Berencén, D. Navarro‐Urrios, B. Garrido, F. Milési, J. Colonna, J. Fédéli
{"title":"154µm Er doped light emitting devices: Role of silicon content","authors":"A. Tengattini, A. Marconi, A. Anopchenko, N. Prtljaga, Lorenzo Pavesi, J. Ramírez, O. Jambois, Y. Berencén, D. Navarro‐Urrios, B. Garrido, F. Milési, J. Colonna, J. Fédéli","doi":"10.1109/GROUP4.2011.6053721","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053721","url":null,"abstract":"Thin erbium implanted silicon rich oxides films have been used as active layer in light emitting devices. Electroluminescence has been observed and analyses as a function of the silicon content.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114954770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Subwavelength structures in SOI waveguides SOI波导中的亚波长结构
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053709
P. Cheben, J. Schmid, P. Bock, J. Lapointe, S. Janz, Danxia Xu, A. Densmore, A. Delâge, R. Ma, R. Halir, B. Lamontagne, A. Ortega-Moñux, Iñigo Molina Fernández, J. Fédéli, M. Ibrahim, W. Ye, T. Hall
{"title":"Subwavelength structures in SOI waveguides","authors":"P. Cheben, J. Schmid, P. Bock, J. Lapointe, S. Janz, Danxia Xu, A. Densmore, A. Delâge, R. Ma, R. Halir, B. Lamontagne, A. Ortega-Moñux, Iñigo Molina Fernández, J. Fédéli, M. Ibrahim, W. Ye, T. Hall","doi":"10.1109/GROUP4.2011.6053709","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053709","url":null,"abstract":"Our progress in subwavelength structures in silicon waveguides is reviewed. Several practical implementations of subwavelength grating waveguides are discussed, including fibre-chip couplers, waveguide crossings and athermal waveguides.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115782998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon 硅上单片集成Ga(NAsP)/(BGa)P QW激光器的物理特性
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053745
N. Hossain, S. Jin, S. Sweeney, S. Liebich, P. Ludewig, M. Zimprich, K. Volz, B. Kunert, W. Stolz
{"title":"Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon","authors":"N. Hossain, S. Jin, S. Sweeney, S. Liebich, P. Ludewig, M. Zimprich, K. Volz, B. Kunert, W. Stolz","doi":"10.1109/GROUP4.2011.6053745","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053745","url":null,"abstract":"This paper reports the lattice matched monolithic integration of novel direct band-gap dilute nitride Ga(NAsP) QW lasers on an (001) silicon substrate using novel (BGa)P strain compensating layer. Lasing operation up to 165K is verified with a threshold current density of 1.6kAcm−2 and a characteristic temperature of 73K for a SQW device, which is a positive step towards a commercial solution for the monolithic integration of long term stable laser diodes on silicon substrates.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"48 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120874419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Building a sustainable future for silicon photonics 为硅光子学构建可持续的未来
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053696
R. Baets
{"title":"Building a sustainable future for silicon photonics","authors":"R. Baets","doi":"10.1109/GROUP4.2011.6053696","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053696","url":null,"abstract":"Silicon photonics presents immense opportunity for innovation in telecom, datacom and sensing. But how do we build the food chain from research to high volume manufacturing? How do we address the issues associated with design tools, industrial fab capability, test and packaging capability?","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"62 1-2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123472129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High-efficiency 25Gb/s CMOS ring modulator with integrated thermal tuning 高效25Gb/s CMOS环形调制器，集成热调谐
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053698
Guoliang Li, Xuezhe Zheng, Jin Yao, H. Thacker, I. Shubin, Ying Luo, K. Raj, J. Cunningham, A. Krishnamoorthy
{"title":"High-efficiency 25Gb/s CMOS ring modulator with integrated thermal tuning","authors":"Guoliang Li, Xuezhe Zheng, Jin Yao, H. Thacker, I. Shubin, Ying Luo, K. Raj, J. Cunningham, A. Krishnamoorthy","doi":"10.1109/GROUP4.2011.6053698","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053698","url":null,"abstract":"We report a 25Gb/s ring modulator with integrated thermal tuning fabricated in a 130nm CMOS process. With 2Vpp modulation, the optical eye shows >6dB extinction ratio. Modulation energy is estimated &#60;24fJ/bit from circuit modeling.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122528714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Ultrafast tunable optical delay in slow light photonic crystal waveguides 慢光光子晶体波导中的超快可调光延迟
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053812
I. Rey, D. Beggs, T. Kampfrath, L. Kuipers, T. Krauss
{"title":"Ultrafast tunable optical delay in slow light photonic crystal waveguides","authors":"I. Rey, D. Beggs, T. Kampfrath, L. Kuipers, T. Krauss","doi":"10.1109/GROUP4.2011.6053812","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053812","url":null,"abstract":"We propose a new design for compact tunable optical delay lines, based on adiabatic wavelength conversion and group velocity dispersion, in engineered silicon slow light photonic crystal waveguides. Actuation is performed over a small fraction of the device area, allowing for efficient operation in terms of switching power. We report on the experimental demonstration of variable delays up to 15 ps in a 300 µm long waveguide using this scheme, thus realising an ultrafast tunable delay line in an integrated format.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128447058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental demonstration of magneto-optical phase shift in silicon on insulator waveguides 绝缘体波导上硅磁光相移的实验证明
8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI: 10.1109/GROUP4.2011.6053749
D. Jalas, A. Stepan, A. Petrov, M. Eich
{"title":"Experimental demonstration of magneto-optical phase shift in silicon on insulator waveguides","authors":"D. Jalas, A. Stepan, A. Petrov, M. Eich","doi":"10.1109/GROUP4.2011.6053749","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053749","url":null,"abstract":"A setup is presented to measure the magneto-optical phase shift in silicon on insulator waveguides. A high sensitivity could be achieved for the setup sufficient to determine the effect produced by silicon and silica.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128479865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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