154µm掺铒发光器件:硅含量的作用

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053721

A. Tengattini, A. Marconi, A. Anopchenko, N. Prtljaga, Lorenzo Pavesi, J. Ramírez, O. Jambois, Y. Berencén, D. Navarro‐Urrios, B. Garrido, F. Milési, J. Colonna, J. Fédéli

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引用次数: 3

摘要

注入铒的富硅氧化物薄膜已被用作发光器件的有源层。电致发光作为硅含量的函数进行了观察和分析。

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154µm Er doped light emitting devices: Role of silicon content

Thin erbium implanted silicon rich oxides films have been used as active layer in light emitting devices. Electroluminescence has been observed and analyses as a function of the silicon content.

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8th IEEE International Conference on Group IV Photonics

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