Misalignment-tolerant high-speed silicon microring modulator with interleaved p-n junctions

Abstract

We present a high-speed silicon microring resonator with misalignment-tolerant interleaved p-n junctions. Moderate doping concentration of 2×10¹⁷ cm⁻³ results in a VπL of 0.98 V·cm and a total propagation loss of < 17 dB/cm. 8 GHz modulation bandwidth and ∼ 30 GHz electric RC bandwidth are experimentally demonstrated.