N. Hossain, S. Jin, S. Sweeney, S. Liebich, P. Ludewig, M. Zimprich, K. Volz, B. Kunert, W. Stolz
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Physical properties of monolithically integrated Ga(NAsP)/(BGa)P QW lasers on silicon
This paper reports the lattice matched monolithic integration of novel direct band-gap dilute nitride Ga(NAsP) QW lasers on an (001) silicon substrate using novel (BGa)P strain compensating layer. Lasing operation up to 165K is verified with a threshold current density of 1.6kAcm−2 and a characteristic temperature of 73K for a SQW device, which is a positive step towards a commercial solution for the monolithic integration of long term stable laser diodes on silicon substrates.
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