{"title":"An ultra-compact waveguide polarizer based on “anti-magic widths”","authors":"R. Tummidi, T. Nguyen, A. Mitchell, T. Koch","doi":"10.1109/GROUP4.2011.6053730","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053730","url":null,"abstract":"We illustrate that SOI ridge waveguide width control can modulate TM mode losses from below 1dB/cm to as high as 34,000 dB/cm, allowing for ultra-high-performance TE polarizers that are easily engineered using standard fabrication processes.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116971232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Kuyken, Xiaoping Liu, R. Osgood, R. Baets, G. Roelkens, W. Green
{"title":"Widely tunable silicon mid-infrared optical parametric oscillator","authors":"B. Kuyken, Xiaoping Liu, R. Osgood, R. Baets, G. Roelkens, W. Green","doi":"10.1109/GROUP4.2011.6053809","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053809","url":null,"abstract":"A synchronously-pumped mid-infrared optical parametric oscillator is demonstrated using unprecedented large parametric gain in silicon photonic wires. The output wavelength is tunable over a 75-nm bandwidth, with a maximum output pulse energy of 1.62 pJ.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131125445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Hybrid electro-refraction and electro-absorption modulators on silicon","authors":"Yongbo Tang, Hui-wen Chen, J. Bowers","doi":"10.1109/GROUP4.2011.6053815","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053815","url":null,"abstract":"We demonstrate high speed electro-refraction and electro-absorption modulators on the hybrid silicon platform. These modulators use distributed electrodes and have good performance for bit rates up to 40 Gb/s or more.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129588961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Epoxy free butt coupling between a lensed fiber and a silicon nanowire waveguide with an inverted taper configuration","authors":"H. Porte, B. Ben Bakir, S. Bernabé","doi":"10.1109/GROUP4.2011.6053825","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053825","url":null,"abstract":"We report the design and realization of a silicon submount characterized by the association of V-groove and a micromachined notch, allowing to host a lensed fiber in an epoxy free configuration. The identical thermal coefficient between the submount and the waveguide chip allows to get a low temperature dependence.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125486714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Compact lens-assisted focusing tapers fabricated on silicon-on-insulator","authors":"K. Van Acoleyen, R. Baets","doi":"10.1109/GROUP4.2011.6053748","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053748","url":null,"abstract":"Efficient tapering is one of the basic functions one needs in photonic integrated circuits. While adiabatic tapers are relatively long, we propose an in-plane lensing technology to make efficient compact tapers on silicon-on-insulator.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"214 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117341419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Brimont, D. Thomson, P. Sanchis, J. Herrera, F. Gardes, J. Fédéli, G. Reed, J. Marti
{"title":"Enhancing the performance of carrier depletion based silicon electro-optical modulators via slow light propagation","authors":"A. Brimont, D. Thomson, P. Sanchis, J. Herrera, F. Gardes, J. Fédéli, G. Reed, J. Marti","doi":"10.1109/GROUP4.2011.6053829","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053829","url":null,"abstract":"Slow light enhancement via a nanostructured one-dimensional (1D) periodic waveguide is exploited to demonstrate up to 40Gb/s modulation in a CMOS compatible 500 µm-long silicon electro-optical device based on carrier depletion in a pn junction.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127915023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A room temperature electrically pumped 1.3-µm InAs quantum dot laser monolithically grown on silicon substrates","authors":"A. Lee, T. Wang, F. Pozzi, A. Seeds, H. Liu","doi":"10.1109/GROUP4.2011.6053757","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053757","url":null,"abstract":"We present a room-temperature 1.3-µm InAs/GaAs quantum dot laser monolithically grown on Si(100). The threshold current at 20°C was 725A/cm2 and the emission wavelength was 1.302µm. The laser was operated in pulsed mode. The growth was enabled via the optimisation of the temperature of the initial nucleation layer of GaAs.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134545613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Schaevitz, E. Edwards, S. Ren, D. Ly-Gagnon, R. Audet, Y. Rong, S. Claussen, E. Tasyurek, J. Roth, J. Harris, D. Miller
{"title":"Simple electroabsorption calculator for germanium quantum well devices","authors":"R. Schaevitz, E. Edwards, S. Ren, D. Ly-Gagnon, R. Audet, Y. Rong, S. Claussen, E. Tasyurek, J. Roth, J. Harris, D. Miller","doi":"10.1109/GROUP4.2011.6053742","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053742","url":null,"abstract":"We present a simple quantum well electroabsorption calculator (SQWEAC) for the germanium material system to facilitate optoelectronic modulator design. We show SQWEAC is valid for a range of quantum well sizes and growth conditions.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132998210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Van Acoleyen, J. Roels, T. Claes, D. van Thourhout, R. Baets
{"title":"NEMS-based optical phase modulator fabricated on Silicon-On-Insulator","authors":"K. Van Acoleyen, J. Roels, T. Claes, D. van Thourhout, R. Baets","doi":"10.1109/GROUP4.2011.6053820","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053820","url":null,"abstract":"We present a compact low-power optical phase modulator on Silicon-On-Insulator consisting of an under-etched slot waveguide. By applying a voltage of 15V across a 9µm long slot waveguide an optical phase change of 60° was observed.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133919977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Zero photonic band-gap structure in Si photonic-wire Bragg-grating","authors":"T. Kita, Hirohito Yamada","doi":"10.1109/GROUP4.2011.6053740","DOIUrl":"https://doi.org/10.1109/GROUP4.2011.6053740","url":null,"abstract":"We have systematically studied Bragg-grating filters in Si photonic-wire waveguides. We found an abnormal localized optical mode on the numerical calculations and verified it on the experimental measurements. This phenomenon originates from high index-contrast between the waveguide materials. Zero photonic band-gap structure was experimentally realized at transition structure of abnormal localized optical mode in 1-D photonic crystal.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130067937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}