利用慢光传播提高载流子耗尽型硅电光调制器的性能

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053829

A. Brimont, D. Thomson, P. Sanchis, J. Herrera, F. Gardes, J. Fédéli, G. Reed, J. Marti

{"title":"利用慢光传播提高载流子耗尽型硅电光调制器的性能","authors":"A. Brimont, D. Thomson, P. Sanchis, J. Herrera, F. Gardes, J. Fédéli, G. Reed, J. Marti","doi":"10.1109/GROUP4.2011.6053829","DOIUrl":null,"url":null,"abstract":"Slow light enhancement via a nanostructured one-dimensional (1D) periodic waveguide is exploited to demonstrate up to 40Gb/s modulation in a CMOS compatible 500 µm-long silicon electro-optical device based on carrier depletion in a pn junction.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Enhancing the performance of carrier depletion based silicon electro-optical modulators via slow light propagation\",\"authors\":\"A. Brimont, D. Thomson, P. Sanchis, J. Herrera, F. Gardes, J. Fédéli, G. Reed, J. Marti\",\"doi\":\"10.1109/GROUP4.2011.6053829\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Slow light enhancement via a nanostructured one-dimensional (1D) periodic waveguide is exploited to demonstrate up to 40Gb/s modulation in a CMOS compatible 500 µm-long silicon electro-optical device based on carrier depletion in a pn junction.\",\"PeriodicalId\":141233,\"journal\":{\"name\":\"8th IEEE International Conference on Group IV Photonics\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2011.6053829\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053829","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

利用纳米结构一维(1D)周期波导的慢光增强，在基于pn结载流子耗尽的CMOS兼容500微米长的硅电光器件中演示了高达40Gb/s的调制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Enhancing the performance of carrier depletion based silicon electro-optical modulators via slow light propagation

Slow light enhancement via a nanostructured one-dimensional (1D) periodic waveguide is exploited to demonstrate up to 40Gb/s modulation in a CMOS compatible 500 µm-long silicon electro-optical device based on carrier depletion in a pn junction.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

8th IEEE International Conference on Group IV Photonics

自引率

0.00%

发文量