{"title":"硅上混合电折射和电吸收调制器","authors":"Yongbo Tang, Hui-wen Chen, J. Bowers","doi":"10.1109/GROUP4.2011.6053815","DOIUrl":null,"url":null,"abstract":"We demonstrate high speed electro-refraction and electro-absorption modulators on the hybrid silicon platform. These modulators use distributed electrodes and have good performance for bit rates up to 40 Gb/s or more.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Hybrid electro-refraction and electro-absorption modulators on silicon\",\"authors\":\"Yongbo Tang, Hui-wen Chen, J. Bowers\",\"doi\":\"10.1109/GROUP4.2011.6053815\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate high speed electro-refraction and electro-absorption modulators on the hybrid silicon platform. These modulators use distributed electrodes and have good performance for bit rates up to 40 Gb/s or more.\",\"PeriodicalId\":141233,\"journal\":{\"name\":\"8th IEEE International Conference on Group IV Photonics\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2011.6053815\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053815","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hybrid electro-refraction and electro-absorption modulators on silicon
We demonstrate high speed electro-refraction and electro-absorption modulators on the hybrid silicon platform. These modulators use distributed electrodes and have good performance for bit rates up to 40 Gb/s or more.