高性能耗尽模式硅调制器

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053702

T. Liow, X. Tu, Q. Fang, Y. Xiong, Junfeng Song, Mingbin Yu, G. Lo, D. Kwong

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引用次数: 2

摘要

报道了在12.5 Gbps下消光比>10 dB、移相光损耗为4 dB的耗尽模式硅调制器。一项新技术进一步降低了光损耗，弥合了硅和LiNbO3调制器之间的性能差距。

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High performance depletion-mode silicon modulators

Depletion mode silicon modulators with an extinction ratio of >10 dB at 12.5 Gbps and a phase-shifter optical loss of 4 dB is reported. A novel technique further reduces the optical loss, bridging the performance gap between silicon and LiNbO3 modulators.

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8th IEEE International Conference on Group IV Photonics

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