Schottky barrier light emitting diode in standard CMOS technology

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053795

Beiju Huang, Wei Wang, Zan Dong, Zanyun Zhang, Weilian Guo, Hongda Chen

引用次数: 2

Abstract

Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from 673nm to 785nm.

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肖特基势垒发光二极管在标准CMOS技术

肖特基势垒发光二极管是用CMOS技术设计和制造的。观察到稳定的电致发光发射。在673nm至785nm的可见光范围内，发射光谱特征广泛，峰值接近平坦。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

8th IEEE International Conference on Group IV Photonics

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