应变和结构对硅中二次谐波产生的影响

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053799

C. Schriever, C. Bohley, F. Naumann, J. de Boor, J. Lange, J. Schilling

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引用次数: 0

摘要

研究了应变和横向结构对硅中反射二次谐波信号的影响。所获得的二次谐波增强可以用于硅波导中，以产生局部二阶非线性磁化率。

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Modification of second harmonic generation in silicon by strain and structuring

The influence of strain and lateral structuring on the reflected second harmonic signal in silicon is investigated. The obtained second-harmonic enhancement could be used in silicon waveguides to create a localized second order nonlinear susceptibility.

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8th IEEE International Conference on Group IV Photonics

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