Design and implementation of SiGe HPTs using an 80GHz SiGe bipolar process technology

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053777

M. Rosales, J. Polleux, C. Algani

引用次数: 13

Abstract

We present the design and characterization of SiGe Heterojunction Phototransistors using an 80GHz commercial SiGe Bipolar process. It is shown that 50µm HPTs are exhibits highest gain.bandwidth product of 0.8GHz.A/W compared to the 10µm HPTs

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使用80GHz SiGe双极工艺技术设计和实现SiGe hpt

我们提出了使用80GHz商用SiGe双极工艺的SiGe异质结光电晶体管的设计和表征。结果表明，50µm hpt具有最高增益。带宽乘积为0.8GHz。与10µm hpt相比的A/W

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

8th IEEE International Conference on Group IV Photonics

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