{"title":"表面等离子体增强锗硅发光二极管的设计","authors":"Intae Jeong, Young June Park","doi":"10.1109/GROUP4.2011.6053788","DOIUrl":null,"url":null,"abstract":"We propose a FIN type Germanium-Silicon heterojunction light-emitting diode with metal gates on both sides. The metal gates provide the plasmon enhancement and the electrical modulation of the PN diode. Using the numerical analysis, we propose the optimal device structure to achieve the best light emitting efficiency.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of surface-plasmon-enhanced Ge-Si light-emitting diode\",\"authors\":\"Intae Jeong, Young June Park\",\"doi\":\"10.1109/GROUP4.2011.6053788\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a FIN type Germanium-Silicon heterojunction light-emitting diode with metal gates on both sides. The metal gates provide the plasmon enhancement and the electrical modulation of the PN diode. Using the numerical analysis, we propose the optimal device structure to achieve the best light emitting efficiency.\",\"PeriodicalId\":141233,\"journal\":{\"name\":\"8th IEEE International Conference on Group IV Photonics\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2011.6053788\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053788","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of surface-plasmon-enhanced Ge-Si light-emitting diode
We propose a FIN type Germanium-Silicon heterojunction light-emitting diode with metal gates on both sides. The metal gates provide the plasmon enhancement and the electrical modulation of the PN diode. Using the numerical analysis, we propose the optimal device structure to achieve the best light emitting efficiency.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
