Power efficiency of silicon nanocrystal based LED in pulsed regime

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053785

A. Marconi, A. Tengattini, A. Anopchenko, Lorenzo Pavesi, G. Pucker

引用次数: 0

Abstract

Power efficiency of silicon nanocrystal light-emitting devices is studied in pulsed regime. A phenomenological opto-electrical model is proposed to explain the frequency dependent electroluminescencewhich has been found.

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脉冲状态下硅纳米晶LED的功率效率

研究了脉冲环境下硅纳米晶发光器件的功率效率。提出了一个现象光电模型来解释已经发现的频率相关的电致发光现象。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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8th IEEE International Conference on Group IV Photonics

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