高密度光互连用硅光子集成电路差分信号传输

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053818

J. Fujikata, Y. Urino, S. Akiyama, Takanori Shimizu, N. Hatori, M. Okano, M. Ishizaka, Tsuyoshi Yamamoto, T. Baba, T. Akagawa, Tatsuya Usuki, D. Okamoto, M. Miura, M. Noguchi, D. Shimura, H. Okayama, T. Tsuchizawa, Toshifumi Watanabe, K. Yamada, S. Itabashi, E. Saito, K. Wada, Takahiro Nakamura, Y. Arakawa

{"title":"高密度光互连用硅光子集成电路差分信号传输","authors":"J. Fujikata, Y. Urino, S. Akiyama, Takanori Shimizu, N. Hatori, M. Okano, M. Ishizaka, Tsuyoshi Yamamoto, T. Baba, T. Akagawa, Tatsuya Usuki, D. Okamoto, M. Miura, M. Noguchi, D. Shimura, H. Okayama, T. Tsuchizawa, Toshifumi Watanabe, K. Yamada, S. Itabashi, E. Saito, K. Wada, Takahiro Nakamura, Y. Arakawa","doi":"10.1109/GROUP4.2011.6053818","DOIUrl":null,"url":null,"abstract":"Differential signal transmission is demonstrated for high-density optical interconnects by a silicon-photonics integrated circuit, in which arrayed lasers, silicon optical modulators (Si-MODs) and germanium photodetectors (Ge-PDs) are integrated on a single silicon substrate. 3 dB gain of output signal-intensity was obtained and about 40 dB suppression of electrical cross-talk between a Si-MOD and a Ge-PD was obtained at GHz range. A lower bit-error-rate of data transmission and enhanced sensitivity of around 2 dB were achieved at 2 Gbps.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Differential signal transmission in silicon-photonics integrated circuit for high density optical interconnects\",\"authors\":\"J. Fujikata, Y. Urino, S. Akiyama, Takanori Shimizu, N. Hatori, M. Okano, M. Ishizaka, Tsuyoshi Yamamoto, T. Baba, T. Akagawa, Tatsuya Usuki, D. Okamoto, M. Miura, M. Noguchi, D. Shimura, H. Okayama, T. Tsuchizawa, Toshifumi Watanabe, K. Yamada, S. Itabashi, E. Saito, K. Wada, Takahiro Nakamura, Y. Arakawa\",\"doi\":\"10.1109/GROUP4.2011.6053818\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Differential signal transmission is demonstrated for high-density optical interconnects by a silicon-photonics integrated circuit, in which arrayed lasers, silicon optical modulators (Si-MODs) and germanium photodetectors (Ge-PDs) are integrated on a single silicon substrate. 3 dB gain of output signal-intensity was obtained and about 40 dB suppression of electrical cross-talk between a Si-MOD and a Ge-PD was obtained at GHz range. A lower bit-error-rate of data transmission and enhanced sensitivity of around 2 dB were achieved at 2 Gbps.\",\"PeriodicalId\":141233,\"journal\":{\"name\":\"8th IEEE International Conference on Group IV Photonics\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2011.6053818\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053818","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

采用硅光子集成电路，将阵列激光器、硅光调制器(Si-MODs)和锗光电探测器(ge - pd)集成在单一硅衬底上，演示了高密度光互连的差分信号传输。在GHz范围内，Si-MOD和Ge-PD之间的电串扰得到了约40 dB的抑制。在2gbps下实现了较低的数据传输误码率和约2db的灵敏度增强。

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Differential signal transmission in silicon-photonics integrated circuit for high density optical interconnects

Differential signal transmission is demonstrated for high-density optical interconnects by a silicon-photonics integrated circuit, in which arrayed lasers, silicon optical modulators (Si-MODs) and germanium photodetectors (Ge-PDs) are integrated on a single silicon substrate. 3 dB gain of output signal-intensity was obtained and about 40 dB suppression of electrical cross-talk between a Si-MOD and a Ge-PD was obtained at GHz range. A lower bit-error-rate of data transmission and enhanced sensitivity of around 2 dB were achieved at 2 Gbps.

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8th IEEE International Conference on Group IV Photonics

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