F. Bianco, E. Borga, A. Yeremian, B. Dierre, K. Fedus, P. Bettotti, A. Pitanti, R. Pierobon, M. Ghulinyan, G. Pucker, M. Cazzanelli, Lorenzo Pavesi
{"title":"硅波导的二阶磁化率χ(2)","authors":"F. Bianco, E. Borga, A. Yeremian, B. Dierre, K. Fedus, P. Bettotti, A. Pitanti, R. Pierobon, M. Ghulinyan, G. Pucker, M. Cazzanelli, Lorenzo Pavesi","doi":"10.1109/GROUP4.2011.6053704","DOIUrl":null,"url":null,"abstract":"Tensile strained-silicon waveguides were produced by LPCVD (780 °C) by depositing a 150 nm-thick Si<inf>3</inf>N<inf>4</inf> overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ<sup>(2)</sup> in the bulk silicon.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"177 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Second-order susceptibility χ(2) in Si waveguides\",\"authors\":\"F. Bianco, E. Borga, A. Yeremian, B. Dierre, K. Fedus, P. Bettotti, A. Pitanti, R. Pierobon, M. Ghulinyan, G. Pucker, M. Cazzanelli, Lorenzo Pavesi\",\"doi\":\"10.1109/GROUP4.2011.6053704\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Tensile strained-silicon waveguides were produced by LPCVD (780 °C) by depositing a 150 nm-thick Si<inf>3</inf>N<inf>4</inf> overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ<sup>(2)</sup> in the bulk silicon.\",\"PeriodicalId\":141233,\"journal\":{\"name\":\"8th IEEE International Conference on Group IV Photonics\",\"volume\":\"177 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2011.6053704\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tensile strained-silicon waveguides were produced by LPCVD (780 °C) by depositing a 150 nm-thick Si3N4 overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ(2) in the bulk silicon.