高q硅基三维光子晶体纳米腔的制备及其具有InAs量子点增益的激光振荡

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053758

D. Cao, A. Tandaechanurat, S. Nakayama, N. Hauke, T. Zabel, S. Ishida, S. Iwamoto, J. Finley, G. Abstreiter, Y. Arakawa

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引用次数: 1

摘要

我们通过微操作技术制备了硅基三维光子晶体纳米腔，其质量因子高达14500。在11K下成功地证明了在腔内插入InAs/GaAs量子点层的激光振荡。

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Fabrication of high-Q silicon-based three-dimensional photonic crystal nanocavity and its lasing oscillation with InAs quantum-dot gain

We fabricated a silicon-based three-dimensional photonic crystal nanocavity by micromanipulation technique, exhibiting a high quality factor of ∼14,500. Lasing oscillation with an InAs/GaAs quantum-dot layer inserted in the cavity was successfully demonstrated at 11K.

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8th IEEE International Conference on Group IV Photonics

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