低背反射绝缘体上硅光栅耦合器

8th IEEE International Conference on Group IV Photonics Pub Date : 2011-11-01 DOI:10.1109/GROUP4.2011.6053713

N. Na, H. Frish, I. Hsieh, Oshrit Harel, Roshan J. George, A. Barkai, H. Rong

{"title":"低背反射绝缘体上硅光栅耦合器","authors":"N. Na, H. Frish, I. Hsieh, Oshrit Harel, Roshan J. George, A. Barkai, H. Rong","doi":"10.1109/GROUP4.2011.6053713","DOIUrl":null,"url":null,"abstract":"We design and fabricate an efficient broadband grating coupler (GC) on a 400nm-thick silicon-on-insulator (SOI) wafer. The measured coupling loss is 2.7dB when coupling to a single-mode fiber (SMF) at 1310nm wavelength with TE polarization. 1dB-full-width and back-reflection are determined to be 30nm and −30dB, respectively.","PeriodicalId":141233,"journal":{"name":"8th IEEE International Conference on Group IV Photonics","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Silicon-on-insulator grating coupler with low back-reflection\",\"authors\":\"N. Na, H. Frish, I. Hsieh, Oshrit Harel, Roshan J. George, A. Barkai, H. Rong\",\"doi\":\"10.1109/GROUP4.2011.6053713\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We design and fabricate an efficient broadband grating coupler (GC) on a 400nm-thick silicon-on-insulator (SOI) wafer. The measured coupling loss is 2.7dB when coupling to a single-mode fiber (SMF) at 1310nm wavelength with TE polarization. 1dB-full-width and back-reflection are determined to be 30nm and −30dB, respectively.\",\"PeriodicalId\":141233,\"journal\":{\"name\":\"8th IEEE International Conference on Group IV Photonics\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th IEEE International Conference on Group IV Photonics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2011.6053713\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th IEEE International Conference on Group IV Photonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2011.6053713","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

我们在400nm厚的绝缘体上硅(SOI)晶圆上设计并制造了一种高效的宽带光栅耦合器(GC)。当耦合到1310nm波长的单模光纤(SMF)时，测量到的耦合损耗为2.7dB。1db -全宽和背反射分别确定为30nm和- 30dB。

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Silicon-on-insulator grating coupler with low back-reflection

We design and fabricate an efficient broadband grating coupler (GC) on a 400nm-thick silicon-on-insulator (SOI) wafer. The measured coupling loss is 2.7dB when coupling to a single-mode fiber (SMF) at 1310nm wavelength with TE polarization. 1dB-full-width and back-reflection are determined to be 30nm and −30dB, respectively.

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8th IEEE International Conference on Group IV Photonics

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