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International Electron Devices Meeting 1991 [Technical Digest]最新文献

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Diffusive base transport in narrow base InP/Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors 窄基InP/Ga/sub 0.47/ in /sub 0.53/As异质结双极晶体管的扩散基输运
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235263
D. Ritter, R. Hamm, A. Feygenson, M. Panish, S. Chandrasekhar
{"title":"Diffusive base transport in narrow base InP/Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors","authors":"D. Ritter, R. Hamm, A. Feygenson, M. Panish, S. Chandrasekhar","doi":"10.1109/IEDM.1991.235263","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235263","url":null,"abstract":"Summary form only given. The sub-picosecond transit times measured in InP/Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors (HBTs) were widely interpreted in terms of quasi-ballistic base transport. The ballistic transport mechanism, however, is ruled out by the results presented here, which indicate that the common emitter current gain of narrow base InP/Ga/sub 0.47/In/sub 0.53/As HBTs is inversely proportional to the square of the base width, as expected for diffusive base transport.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"1 1","pages":"967-969"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80138533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Hot carrier induced photon emission in submicron GaAs devices 亚微米砷化镓器件中的热载流子诱导光子发射
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235361
C. Tedesco, M. Manfredi, A. Paccagnella, E. Zanoni, C. Canali
{"title":"Hot carrier induced photon emission in submicron GaAs devices","authors":"C. Tedesco, M. Manfredi, A. Paccagnella, E. Zanoni, C. Canali","doi":"10.1109/IEDM.1991.235361","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235361","url":null,"abstract":"The authors present a study of impact ionization phenomena in GaAs MESFETs and AlGaAs-GaAs HEMTs (high electron mobility transistors) occurring at high drain voltages. This analysis has been performed by analyzing the gate current due to the collection of holes generated by impact ionization and light emission. The authors present the relationship of gate current with simulated electric field in the channel, the electroluminescence spectra in the 1.1-3.1-eV energy range, and the correlation of integrated light intensity with the product of the electron and hole current which suggests that the recombination process is the main mechanism for visible light emission.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"19 1","pages":"437-440"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79963373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Design criteria for high frequency, ultra high di/dt MAGTs 高频，超高di/dt磁力管的设计标准
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235478
T. Shinohe, A. Yahata, M. Atsuta, Y. Minami, N. Ohashi
{"title":"Design criteria for high frequency, ultra high di/dt MAGTs","authors":"T. Shinohe, A. Yahata, M. Atsuta, Y. Minami, N. Ohashi","doi":"10.1109/IEDM.1991.235478","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235478","url":null,"abstract":"2500-V MOS assisted gate triggered thyristors (MAGTs) have been proposed as promising devices for future pulsed power applications. It was successfully demonstrated that the device has extremely high turn-on capability, comparable to thyratrons. The MAGT high-frequency operation design criteria are shown here. The photoluminescence (PL) decay method was used to measure the actual carrier lifetime in MAGT devices. It reveals that an electron carrier lifetime more than half of the operating pulse width is sufficient to minimize the turn-on loss. This means that the pause period can be reduced while still retaining small turn-on loss. A simple model is presented to interpret the turn-on loss dependence on the N-base width. With the optimized devices, 5-kHz operation was successfully demonstrated.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"83 1","pages":"153-156"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81064987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
1.9 picosecond optical temporal analyzer using 1.2 picosecond photodetector and gate 1.9皮秒光学时间分析仪采用1.2皮秒光电探测器和栅极
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235366
Y. Chen, S. Williamson, T. Brock, F. Smith
{"title":"1.9 picosecond optical temporal analyzer using 1.2 picosecond photodetector and gate","authors":"Y. Chen, S. Williamson, T. Brock, F. Smith","doi":"10.1109/IEDM.1991.235366","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235366","url":null,"abstract":"The authors report on a novel photoconductive-type detector with a response time of 1.2 ps. This is the fastest photodetector to date. It is based on low-temperature-grown GaAs and uses interdigitated electrodes of 0.2 mu m spacing to match the carrier transit time to the carrier lifetime. The responsivity is 0.1 A/W. The detector can be driven to an on-state resistance of a few of ohms, with the response time increasing to only 1.5 ps. The photodetector can therefore also function as a picosecond photogate. The two components have been combined to form an all-semiconductor optical temporal analyzer. The system response time is 1.9 ps, with a minimum detectable average power of 500 pW. The technique is jitter-free, permitting long integration times. Ultraweak picosecond fluorescence and scattering experiments, as well as other ultrafast phenomena can be time-resolved using this relatively simple tool.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"12 1","pages":"416-421"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87815298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Millimeter wave AlGaAs/InGaAs 2DEG-CCDs
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235471
R. Colbeth, R. Larue, G. Davis, C. Yuen, C. Webb, C. Shih, R. Weiss
{"title":"Millimeter wave AlGaAs/InGaAs 2DEG-CCDs","authors":"R. Colbeth, R. Larue, G. Davis, C. Yuen, C. Webb, C. Shih, R. Weiss","doi":"10.1109/IEDM.1991.235471","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235471","url":null,"abstract":"A two-phase, InGaAs channel 2DEG-CCD (charge coupled device) intended for millimeter-wave signal acquisition and delay is presented. Signal delay versus clock frequency has been measured from 1 MHz to 14 GHz, verifying CCD operation. The input-to-output transfer function is linear with a 1 dB compression point at 2 dBm and a 3rd harmonic intercept at 35 dBm. A charge transfer efficiency (CTE) of 0.99 has been measured at 4.73 GHz. Two-dimensional transient simulations show that the charge packet transfers at saturation velocity, and that CTE degradation results primarily from charge trapping in interelectrode parasitic wells. The simulations predict that CTE greater than 0.9999 is achievable at clock frequencies up to 50 GHz.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"108 1","pages":"183-186"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89785684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Transverse-modulation klystron design considerations and preliminary results 横向调制速调管的设计考虑及初步结果
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235310
W. M. Black, J. Velazco, T. Godlove, F.M. Mako
{"title":"Transverse-modulation klystron design considerations and preliminary results","authors":"W. M. Black, J. Velazco, T. Godlove, F.M. Mako","doi":"10.1109/IEDM.1991.235310","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235310","url":null,"abstract":"A proof-of-principle experiment has been assembled and is being tested to validate a novel microwave amplifier concept. The method uses transverse deflection modulation of a collimated electron beam which is converted to axial bunching by a magnet designed to bend the beam 105 degrees . Since the mechanism avoids the well-known problem of longitudinal bunching at relativistic velocities, it is suitable for high-voltage beams. Design considerations and preliminary initial results are presented. The results give confidence that the basic mechanism is valid. It is believed that the present results are limited by a combination of finite beam size effects and space charge, both of which tend to dilute effective bunching.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"9 1","pages":"771-774"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89952380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulational study for gate oxide breakdown mechanism due to non-uniform electron current flow 电子流不均匀导致栅极氧化物击穿机理的模拟研究
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235282
M. Kubota, K. Harafuji, A. Misaka, A. Yamano, H. Nakagawa, N. Nomura
{"title":"Simulational study for gate oxide breakdown mechanism due to non-uniform electron current flow","authors":"M. Kubota, K. Harafuji, A. Misaka, A. Yamano, H. Nakagawa, N. Nomura","doi":"10.1109/IEDM.1991.235282","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235282","url":null,"abstract":"A novel simulator for plasma processing has been developed and applied to analyze the gate oxide damage during parallel plate oxygen RIE (reactive ion etching) (13.56 MHz). The TDDB (time-dependent dielectric breakdown) and flat band voltage shift of a poly-silicon gate nMOS capacitor were experimentally measured. The results suggest a new mechanism where a large electron current flow near the wafer edge induces the damage.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"1 1","pages":"891-894"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84911329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
1040*1040 element PtSi Schottky-barrier IR image sensor 1040*1040元件PtSi肖特基垒红外图像传感器
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235473
N. Yutani, H. Yagi, M. Kimata, J. Nakanishi, S. Nagayoshi, N. Tubouchi
{"title":"1040*1040 element PtSi Schottky-barrier IR image sensor","authors":"N. Yutani, H. Yagi, M. Kimata, J. Nakanishi, S. Nagayoshi, N. Tubouchi","doi":"10.1109/IEDM.1991.235473","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235473","url":null,"abstract":"A high-density infrared image sensor has been developed for thermal imaging in the 3-5 mu m infrared band. The array size is 1040*1040. The detector is a platinum silicide (PtSi) Schottky-barrier diode. The charge sweep device (CSD) architecture is used for the device in order to realize a large fill factor and a high saturation level. The device is fabricated with a 1.5 mu m minimum feature size and has a large fill factor of 53% in spite of the small pixel size (17*17 mu m/sup 2/). The saturation level is improved by increasing the detector storage capacity. A high saturation level of 1.6*10/sup 6/ electrons is obtained. The noise equivalent temperature difference with f/1.2 optics is estimated as 0.10 K at 300 K.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"6 1","pages":"175-178"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83621770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Single crystal emitter gap for epitaxial Si- and SiGe-base transistors 外延硅基和硅基晶体管的单晶发射极间隙
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235290
J. Comfort, E. Crabbé, J. Cressler, W. Lee, J. Sun, J. Malinowski, M. D'Agostino, J. Burghartz, J. Stork, B. Meyerson
{"title":"Single crystal emitter gap for epitaxial Si- and SiGe-base transistors","authors":"J. Comfort, E. Crabbé, J. Cressler, W. Lee, J. Sun, J. Malinowski, M. D'Agostino, J. Burghartz, J. Stork, B. Meyerson","doi":"10.1109/IEDM.1991.235290","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235290","url":null,"abstract":"An epitaxial base bipolar technology has been used for fabrication of graded SiGe-based HBTs (heterojunction bipolar transistors) or Si-base pseudo-HBTs with a self-aligned in-situ doped n-type low-temperature epitaxial (LTE) emitter. The thin LTE emitter provides an EB junction with low tunneling current and low capacitance in a n+ poly/n/p+/n thin base HBT design with very high base doping. The authors report on Si and SiGe devices utilizing a 40 nm P doped LTE emitter with an n+ poly contact and silicided p+ poly extrinsic base contact. Nearly ideal DC characteristics were obtained for a device with a peak base doping concentration of over 1*10/sup 19/ cm/sup -3/. 44 GHz f/sub T/ devices with an AC base resistance of only 150 Omega were used to fabricate 24 ps ECL (emitter coupled logic) and 19 ps NTL ring oscillators to demonstrate the performance potential of the structure.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"36 1","pages":"857-860"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78799657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Channel hot-carrier induced oxide charge trapping in NMOSFET'S NMOSFET中通道热载子诱导的氧化物电荷捕获
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235319
W. Chen, T. Ma
{"title":"Channel hot-carrier induced oxide charge trapping in NMOSFET'S","authors":"W. Chen, T. Ma","doi":"10.1109/IEDM.1991.235319","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235319","url":null,"abstract":"Localized oxide charge trapping in N-channel MOSFETs caused by channel-hot-carrier (CHC) injection has been studied by the use of a modified charge-pumping technique. Depending on the CHC injection conditions, trapping of either positive or negative oxide charge, along with an increase in the interface-trap density, has been measured by this technique with excellent sensitivity. Evidence for the dynamic evolution of the damage location during DC CHC stressing is presented. The technique can also be readily extended to P-channel MOSFETs, as demonstrated by an example.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"34 1","pages":"731-734"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79211961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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