Channel hot-carrier induced oxide charge trapping in NMOSFET'S

Abstract

Localized oxide charge trapping in N-channel MOSFETs caused by channel-hot-carrier (CHC) injection has been studied by the use of a modified charge-pumping technique. Depending on the CHC injection conditions, trapping of either positive or negative oxide charge, along with an increase in the interface-trap density, has been measured by this technique with excellent sensitivity. Evidence for the dynamic evolution of the damage location during DC CHC stressing is presented. The technique can also be readily extended to P-channel MOSFETs, as demonstrated by an example.<>