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International Electron Devices Meeting 1991 [Technical Digest]最新文献

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A low-power, high-efficiency Ka-band TWTA 低功耗，高效率的ka波段TWTA
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1992-03-01 DOI: 10.1109/IEDM.1991.235403
A. Curren, J. Dayton, R. Palmer, D. A. Force, R. Tamashiro, J.F. Wilson, L. Dombro, W. Harvey
{"title":"A low-power, high-efficiency Ka-band TWTA","authors":"A. Curren, J. Dayton, R. Palmer, D. A. Force, R. Tamashiro, J.F. Wilson, L. Dombro, W. Harvey","doi":"10.1109/IEDM.1991.235403","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235403","url":null,"abstract":"The authors describe a NASA-sponsored program whose objective is to develop a high-efficiency, low-power TWTA (traveling wave tube amplifier) operating at 32 GHz and meeting the requirements for the Cassini Mission to study Saturn, planned for launch in 1995. The required RF output power of the helix TWT is 10 W, while the DC power from the spacecraft is limited to about 30 W. This performance level will permit the transmission to Earth of all the data produced in the mission. In order to achieve this efficiency, several novel technologies are incorporated into the TWT, including an advanced dynamic velocity taper characterized by a nonlinear reduction in pitch in the output helix section of the TWT and a Lewis-designed multistage depressed collector using copper electrodes treated for secondary electron emission suppression. Preliminary program results are encouraging: RF output power of 10.6 W has been obtained at 14-mA beam current and 5.2-kV helix voltage with overall TWT efficiency exceeding 40%.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"126 1","pages":"581-584"},"PeriodicalIF":0.0,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76155507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Silicon integrated injection logic operating above 350 degrees C 硅集成注入逻辑工作在350摄氏度以上
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235476
T. Sunayama, H. Kawakami, M. Migitaka
{"title":"Silicon integrated injection logic operating above 350 degrees C","authors":"T. Sunayama, H. Kawakami, M. Migitaka","doi":"10.1109/IEDM.1991.235476","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235476","url":null,"abstract":"In order to develop silicon ICs operating above 350 degrees C, an integrated injection logic (IlL) was chosen as an example. A novel structure for the IIL was designed through experimental and theoretical studies of pn junctions and transistors at high temperatures. The designed IIL was achieved by newly developed combined processes of ion implantation and low-temperature epitaxy. The developed IIL is fully operational from room temperature to 385 degrees C. The V/sub OH/ decreases with temperature at the rate of 1.8 mV/ degrees C and is about 215 mV at 370 degrees C. V/sub OL/ does the same at about 45 mV in a temperature range from 50 to 370 degrees C. The signal swing of a nine-stage ring oscillator is about 30 mV at 385 degrees C. The power delay product is 18 pJ/stage.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"86 1","pages":"161-164"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73468397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay 全电子束0.25 μ m双极技术，ECL栅极延迟低于25 ps
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235267
J. Warnock, J. Cressler, P. Coane, K. Chiong, M. Rothwell, K. Jenkins, J. Burghartz, E. Petrillo, N. Mazzeo, A. Megdanis, F. Hohn, M. Thomson, J. Sun, D. Tang
{"title":"A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay","authors":"J. Warnock, J. Cressler, P. Coane, K. Chiong, M. Rothwell, K. Jenkins, J. Burghartz, E. Petrillo, N. Mazzeo, A. Megdanis, F. Hohn, M. Thomson, J. Sun, D. Tang","doi":"10.1109/IEDM.1991.235267","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235267","url":null,"abstract":"Summary form only given. The full leverage offered by E-beam lithography has been exploited in a 0.25- mu m bipolar process. The tight overlay capability was shown to provide a significant advantage in shrinking the overall transistor size. In conjunction with a device technology optimized to provide a 33-GHz 0.25- mu m-emitter device, this culminated in the achievement of an ECL (emitter coupled logic) delay of 24 ps at a switching current of only 1.1 mA.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"19 1","pages":"956-958"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73586283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 0.4 micron fully complementary BiCMOS technology for advanced logic and microprocessor applications 一个0.4微米的完全互补的BiCMOS技术，用于先进的逻辑和微处理器应用
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235418
S. Sun, P. Tsui, B.M. Somero, J. Klein, F. Pintchovski, J.R. Yeargain, B. Pappert
{"title":"A 0.4 micron fully complementary BiCMOS technology for advanced logic and microprocessor applications","authors":"S. Sun, P. Tsui, B.M. Somero, J. Klein, F. Pintchovski, J.R. Yeargain, B. Pappert","doi":"10.1109/IEDM.1991.235418","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235418","url":null,"abstract":"A modular process architecture has been adopted to develop a versatile yet manufacturable, single-poly, four-level metal, fully complementary BiCMOS technology for sub-0.5 mu m logic and microprocessor products. Both the poly-emitter vertical n-p-n and p-n-p bipolar transistors are integrated into a dual-poly (n/sup +//p/sup +/) gate CMOS process flow. Using a pedestal implant in the emitter window, the n-p-n performance has been enhanced to 26 GHz. Lateral p-n-p and TiSi/sub 2/ Schottky barrier diode devices formed during the titanium self-aligned silicide process are available for various circuit applications. Stacking of the tungsten-plug contacts and vias is allowed in the multilevel metallization module. A process window analysis has also been performed to derive the optimal device design targets. Compared with the CMOS counterpart, approximately 40% speed improvement (at 3.3 V V/sub cc/) in a 68030 critical path has been demonstrated using this logic BiCMOS technology.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"42 1","pages":"85-88"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77655665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
InAlAs/InGaAs double heterojunction bipolar transistors with a collector launcher structure for high-speed ECL applications 具有集电极发射结构的InAlAs/InGaAs双异质结双极晶体管，用于高速ECL应用
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235264
H. Yamada, T. Futatsugi, H. Shigematsu, T. Tomioka, T. Fujii, N. Yokayama
{"title":"InAlAs/InGaAs double heterojunction bipolar transistors with a collector launcher structure for high-speed ECL applications","authors":"H. Yamada, T. Futatsugi, H. Shigematsu, T. Tomioka, T. Fujii, N. Yokayama","doi":"10.1109/IEDM.1991.235264","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235264","url":null,"abstract":"Summary form only given. The authors report the demonstration of high-speed ECL (emitter coupled logic) circuits using InAlAs/InGaAs double-heterojunction bipolar transistors (DHBTs). These DHBTs use a launcher structure in the collector to reduce the collector transit time. The DHBTs achieve the cutoff frequencies of f/sub T/=64 GHz and f/sub max/=54 GHz and hold a breakdown voltage about three times that of conventional InGaAs single-heterojunction bipolar transistors. A 1/4-frequency divider with bilevel ECL gates fabricated using these DHBTs operated at up to 11.9 GHz with a supply voltage of 3.5 V. The total power consumption was 255 mW. The novel collector structure produces high-speed and high-breakdown-voltage DHBTs, enabling high-speed digital applications of InGaAs-based HBTs.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"15 1","pages":"964-966"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79286139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A new three dimensional IC fabrication technology, stacking thin film DUAL-CMOS layers 一种新的三维集成电路制造技术，堆叠薄膜双cmos层
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235336
Y. Hayashi, K. Oyama, S. Takahashi, S. Wada, K. Kajiyana, R. Koh, T. Kunio
{"title":"A new three dimensional IC fabrication technology, stacking thin film DUAL-CMOS layers","authors":"Y. Hayashi, K. Oyama, S. Takahashi, S. Wada, K. Kajiyana, R. Koh, T. Kunio","doi":"10.1109/IEDM.1991.235336","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235336","url":null,"abstract":"A novel 3-D IC has been developed in which electrical function blocks of thin-film dual-active-device-layer (DUAL) CMOS ICs are bonded cumulatively. In the DUAL-CMOS ICs, pMOSFETs are stacked on nMOSFETs by using a laser beam annealing technique. By mechano-chemical polishing, the IC substrates are thinned, and then joined together. Operation of function blocks such as an inverter and ring oscillator stacked in the 3-D IC is confirmed.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"60 1","pages":"657-660"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85637624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Very lightly nitrided oxide gate MOSFETs for deep-sub-micron CMOS devices 用于深亚微米CMOS器件的极轻氮化氧化栅mosfet
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235379
H. Momose, T. Morimoto, Y. Ozawa, M. Tsuchiaki, M. Ono, K. Yamabe, H. Iwai
{"title":"Very lightly nitrided oxide gate MOSFETs for deep-sub-micron CMOS devices","authors":"H. Momose, T. Morimoto, Y. Ozawa, M. Tsuchiaki, M. Ono, K. Yamabe, H. Iwai","doi":"10.1109/IEDM.1991.235379","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235379","url":null,"abstract":"The characteristics and reliability of the nitrided oxide gate n- and p-MOSFETs with less than 1 atom% nitrogen concentration gate films were investigated in detail. These very light nitridations were accomplished using NH/sub 3/ gas at low temperatures from 800 degrees C to 900 degrees C. The low nitrogen concentrations, such as 0.13 atom% were obtained by SIMS and AES (Auger electron spectroscopy) measurements. The optimum nitrogen concentration region for the deep-sub-micron device is discussed. It was shown that, with the 0.5 atom% nitrogen concentration, good drivability and good hot carrier reliability were attained at the same time, and they were equivalent to those of the oxynitride gate MOSFETs using N/sub 2/O gas. The suppression of boron penetration is also discussed.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"37 1","pages":"359-362"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85491196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Beam optics calculations in very high power microwave tubes 高功率微波管中的光束光学计算
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235369
R. True
{"title":"Beam optics calculations in very high power microwave tubes","authors":"R. True","doi":"10.1109/IEDM.1991.235369","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235369","url":null,"abstract":"The author outlines advances in computer simulation, computer-aided design procedures, and technology related to the formation, focusing, and collection of very high power beams used in superpower klystrons for advanced linear colliders, free-electron lasers, and other such high-power microwave (HPM) devices. Grading electrodes can be included in the beam formation region of Pierce guns and between the ceramic insulators to increase the high-voltage standoff limit (as in Van de Graaff accelerators). A theoretical basis for their use is established here. Recent improvements in the fully relativistic version of the deformable triangular mesh beam optics code written by the author are described. Selected test cases and examples of its use are presented. A high-perveance 1 MV Pierce gun having three grading electrodes is described which can provide a 1.83 GW 9.13 kJ./pulse beam.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"22 5 1","pages":"403-406"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85691802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Design and development of a high performance gyro-TWT-amplifier operating at a cyclotron harmonic frequency 在回旋加速器谐波频率下工作的高性能回旋行波管放大器的设计与研制
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235307
H. Guo, Y. Carmel, B. Levush, T. Antonsen, S. Cai, L. Chen, V. Granatstein
{"title":"Design and development of a high performance gyro-TWT-amplifier operating at a cyclotron harmonic frequency","authors":"H. Guo, Y. Carmel, B. Levush, T. Antonsen, S. Cai, L. Chen, V. Granatstein","doi":"10.1109/IEDM.1991.235307","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235307","url":null,"abstract":"A 35 GHz gyro-TWT (traveling wave tube) amplifier designed for operation at the second harmonic of the cyclotron frequency is presented. It is expected that 200 kW peak output, 15% bandwidth, 40 dB saturated gain and efficiency of 25% can be obtained. The design may be extended to 94 GHz operation at the fourth cyclotron harmonic. These harmonic gyrotron amplifiers will operate at a magnetic field strength which is compatible with modern permanent-magnet technology.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"20 1","pages":"783-785"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72851071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
MOMBE-grown carbon-doped base self-aligned AlGaAs/GaAs heterojunction bipolar transistors for microwave applications 微波用掺杂碳基自对准AlGaAs/GaAs异质结双极晶体管
International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI: 10.1109/IEDM.1991.235303
W. Ho, N.L. Wang, R. Pierson, M. Chang, R. Nubling, J. Higgins, S. Hersee, J. Ballingal, J. Komiak
{"title":"MOMBE-grown carbon-doped base self-aligned AlGaAs/GaAs heterojunction bipolar transistors for microwave applications","authors":"W. Ho, N.L. Wang, R. Pierson, M. Chang, R. Nubling, J. Higgins, S. Hersee, J. Ballingal, J. Komiak","doi":"10.1109/IEDM.1991.235303","DOIUrl":"https://doi.org/10.1109/IEDM.1991.235303","url":null,"abstract":"The authors report the first demonstration of completely MOMBE (metal-organic molecular beam epitaxy) grown carbon-doped base self-aligned AlGaAs/GaAs HBTs (heterojunction bipolar transistors) operating at microwave frequencies. Excellent DC and RF characteristics have been achieved. For a 1400-AA-thick base doped at a level of 1*10/sup 19/ cm/sup -3/, cutoff frequency f/sub T/ of 45 GHz and f/sub max/ of 90 GHz were measured from common emitter HBTs. Common base HBTs with total emitter area of 360 mu m/sup 2/ delivered 560 mW output power with 43% of power-added efficiency and 8.9 dB gain at 10 GHz. A high-power MMIC (monolithic microwave integrated circuit) amplifier operating in 8-11 GHz bandwidth has achieved 2 W output power. The device modeling based on measured S-parameters indicates that the performance can be further improved with optimal layer structure and doping profiles.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"131 1","pages":"801-804"},"PeriodicalIF":0.0,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87922264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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