W. Ho, N.L. Wang, R. Pierson, M. Chang, R. Nubling, J. Higgins, S. Hersee, J. Ballingal, J. Komiak
{"title":"微波用掺杂碳基自对准AlGaAs/GaAs异质结双极晶体管","authors":"W. Ho, N.L. Wang, R. Pierson, M. Chang, R. Nubling, J. Higgins, S. Hersee, J. Ballingal, J. Komiak","doi":"10.1109/IEDM.1991.235303","DOIUrl":null,"url":null,"abstract":"The authors report the first demonstration of completely MOMBE (metal-organic molecular beam epitaxy) grown carbon-doped base self-aligned AlGaAs/GaAs HBTs (heterojunction bipolar transistors) operating at microwave frequencies. Excellent DC and RF characteristics have been achieved. For a 1400-AA-thick base doped at a level of 1*10/sup 19/ cm/sup -3/, cutoff frequency f/sub T/ of 45 GHz and f/sub max/ of 90 GHz were measured from common emitter HBTs. Common base HBTs with total emitter area of 360 mu m/sup 2/ delivered 560 mW output power with 43% of power-added efficiency and 8.9 dB gain at 10 GHz. A high-power MMIC (monolithic microwave integrated circuit) amplifier operating in 8-11 GHz bandwidth has achieved 2 W output power. The device modeling based on measured S-parameters indicates that the performance can be further improved with optimal layer structure and doping profiles.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"131 1","pages":"801-804"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"MOMBE-grown carbon-doped base self-aligned AlGaAs/GaAs heterojunction bipolar transistors for microwave applications\",\"authors\":\"W. Ho, N.L. Wang, R. Pierson, M. Chang, R. Nubling, J. Higgins, S. Hersee, J. Ballingal, J. Komiak\",\"doi\":\"10.1109/IEDM.1991.235303\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors report the first demonstration of completely MOMBE (metal-organic molecular beam epitaxy) grown carbon-doped base self-aligned AlGaAs/GaAs HBTs (heterojunction bipolar transistors) operating at microwave frequencies. Excellent DC and RF characteristics have been achieved. For a 1400-AA-thick base doped at a level of 1*10/sup 19/ cm/sup -3/, cutoff frequency f/sub T/ of 45 GHz and f/sub max/ of 90 GHz were measured from common emitter HBTs. Common base HBTs with total emitter area of 360 mu m/sup 2/ delivered 560 mW output power with 43% of power-added efficiency and 8.9 dB gain at 10 GHz. A high-power MMIC (monolithic microwave integrated circuit) amplifier operating in 8-11 GHz bandwidth has achieved 2 W output power. The device modeling based on measured S-parameters indicates that the performance can be further improved with optimal layer structure and doping profiles.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"131 1\",\"pages\":\"801-804\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235303\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MOMBE-grown carbon-doped base self-aligned AlGaAs/GaAs heterojunction bipolar transistors for microwave applications
The authors report the first demonstration of completely MOMBE (metal-organic molecular beam epitaxy) grown carbon-doped base self-aligned AlGaAs/GaAs HBTs (heterojunction bipolar transistors) operating at microwave frequencies. Excellent DC and RF characteristics have been achieved. For a 1400-AA-thick base doped at a level of 1*10/sup 19/ cm/sup -3/, cutoff frequency f/sub T/ of 45 GHz and f/sub max/ of 90 GHz were measured from common emitter HBTs. Common base HBTs with total emitter area of 360 mu m/sup 2/ delivered 560 mW output power with 43% of power-added efficiency and 8.9 dB gain at 10 GHz. A high-power MMIC (monolithic microwave integrated circuit) amplifier operating in 8-11 GHz bandwidth has achieved 2 W output power. The device modeling based on measured S-parameters indicates that the performance can be further improved with optimal layer structure and doping profiles.<>
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